ChipFind - документация

Электронный компонент: BAP64-02

Скачать:  PDF   ZIP
DATA SHEET
Preliminary specification
Supersedes data of 1999 Jun 16
1999 Sep 21
DISCRETE SEMICONDUCTORS
BAP64-02
Silicon PIN diode
M3D319
1999 Sep 21
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Very low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Marking code: S.
Fig.1 Simplified outline (SOD523) and symbol.
handbook, halfpage
1
2
Top view
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
175
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
= 90
C
-
715
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
1999 Sep 21
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA
-
0.95
1.1
V
I
R
reverse leakage current
V
R
=175 V
-
-
10
A
V
R
= 20 V
-
-
1
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz
-
0.48
-
pF
V
R
= 1 V; f = 1 MHz
-
0.35
-
pF
V
R
= 20 V; f = 1 MHz
-
0.23
0.35
pF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
-
20
40
I
F
= 1 mA; f = 100 MHz; note 1
-
10
20
I
F
= 10 mA; f = 100 MHz; note 1
-
2
3.8
I
F
= 100 mA; f = 100 MHz; note 1
-
0.7
1.35
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
-
1.55
-
s
L
S
series inductance
-
0.6
-
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
85
K/W
1999 Sep 21
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
GRAPHICAL DATA
handbook, halfpage
10
2
10
1
10
-
1
MGL856
10
-
1
1
IF (mA)
rD
(
)
10
10
2
Fig.2
Forward resistance as a function of forward
current; typical values.
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
0
20
500
0
200
100
400
300
4
VR (V)
Cd
(fF)
12
8
16
MGL857
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0.5
3
0
-
5
S21
2
-
4
-
3
-
2
-
1
1
f (GHz)
(1)
(2)
(4)
1.5
2
2.5
MGL858
(dB)
(3)
Fig.4
Insertion loss (
S
21
2
) of the diode as a
function of frequency; typical values.
(1) I
F
= 100 mA. (2) I
F
= 10 mA. (3) I
F
= 1 mA. (4) I
F
= 0.5 mA.
Diode inserted in series with a 50
stripline circuit and biased
via the analyzer Tee network.
T
amb
= 25
C.
handbook, halfpage
0.5
3
0
-
30
-
20
-
10
1
f (GHz)
1.5
2
2.5
MGL859
S21
2
(dB)
Fig.5
Isolation (
S
21
2
) of the diode as a function
of frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
1999 Sep 21
5
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-02
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD523
SC-79
98-11-25
Plastic surface mounted package; 2 leads
SOD523
0
0.5
1 mm
scale
D
1
2
HE
E
bp
A
c
v
M
A
A
UNIT
bp
c
D
E
v
mm
0.35
0.25
0.2
0.1
0.15
0.9
0.7
1.3
1.1
A
0.7
0.5
HE
1.7
1.5
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)