Document Outline
- FEATURES
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 26
DISCRETE SEMICONDUCTORS
BAS11; BAS12
Controlled avalanche rectifiers
M3D122
book, halfpage
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
TM
(1)
technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
Marking code BAS11: S11.
Marking code BAS12: S12.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAS11
-
300
V
BAS12
-
400
V
V
RWM
working reverse voltage
BAS11
-
300
V
BAS12
-
400
V
V
R
continuous reverse voltage
BAS11
-
300
V
BAS12
-
400
V
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
= 75
C; lead length = 10 mm;
see Figs 2 and 4
-
350
mA
averaged over any 20 ms period;
T
amb
= 30
C; PCB mounting
(see Fig.8); see Figs 3 and 4
-
300
mA
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
4
A
P
RRM
repetitive peak reverse power
dissipation
t = 10
s square wave; f = 50 Hz;
T
amb
= 25
C
-
75
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.8.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 300 mA; T
j
= T
jmax
; see Fig.5
-
-
1.0
V
I
F
= 300 mA; see Fig.5
-
-
1.1
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BAS11
330
-
-
V
BAS12
440
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.6
-
-
250
nA
V
R
= V
RRMmax
; T
j
= 125
C; see Fig.6
-
-
10
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.9
-
-
1
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.7
-
20
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
340
K/W
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
0.6
IF(AV)
(A)
0.4
0.2
0
40
200
MGD293
80
120
160
Ttp (
o
C)
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
IF(AV)
(A)
40
200
0.4
0.3
0.1
0
0.2
80
120
160
Tamb (
C)
MGD295
Device mounted as shown in Fig.8.
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
handbook, halfpage
0
0.1
0.2
0.4
0.5
2.5
1.57
P
(W)
0
0.4
MGD292
0.3
IF(AV)(A)
0.3
0.2
0.1
1.42
a = 3
2
Solid line: T
j
= 25
C.
Dotted line: T
j
= 150
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
VF (V)
3
5
IF
(A)
0
4
MGD294
3
2
1
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
Fig.6
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
50
100
10
2
10
-
1
MGD297
10
IR
(
A)
1
150
Tj (
o
C)
V
R
= V
RRMmax
.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
MGD296 - 1
10
VR(V)
1
10
-
1
10
2
10
3
10
Cd
(pF)
1
Fig.8 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
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