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1.
Product profile
1.1 General description
Three electrically isolated high-speed switching diodes, encapsulated in very small SMD
plastic packages.
1.2 Features
s
Very small SMD plastic packages
s
High-speed switching
s
Three electrically isolated diodes
s
Low capacitance.
1.3 Applications
s
General purpose switching in surface mounted circuits.
1.4 Quick reference data
BAS16VV; BAS16VY
Triple high-speed switching diodes
Rev. 02 -- 10 September 2004
Product data sheet
Table 1:
Product overview
Type number
Package
Configuration
Philips
EIAJ
BAS16VV
SOT666
-
triple isolated diode
BAS16VY
SOT363
SC-88
triple isolated diode
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
R
reverse voltage
-
-
100
V
I
FRM
repetitive peak forward current
-
-
450
mA
t
rr
reverse recovery time
-
-
4
ns
9397 750 13856
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 10 September 2004
2 of 12
Philips Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5.
Limiting values
Table 3:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
001aab555
6
4
5
1
3
2
sym043
6
5
4
1
2
3
Table 4:
Ordering information
Type number
Package
Name
Description
Version
BAS16VV
-
plastic surface mounted package; 6 leads
SOT666
BAS16VY
SC-88
plastic surface mounted package; 6 leads
SOT363
Table 5:
Marking
Type number
Marking code
[1]
BAS16VV
53
BAS16VY
16*
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V
RRM
repetitive peak reverse
voltage
-
100
V
V
R
reverse voltage
-
100
V
I
F
forward current
-
200
mA
I
FRM
repetitive peak forward
current
-
450
mA
9397 750 13856
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 10 September 2004
3 of 12
Philips Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
[1]
T
j
= 25
C prior to surge; see
Figure 2
.
[2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[3]
Single diode loaded.
[4]
Solder points at pins 2, 3, 5 and 6.
6.
Thermal characteristics
[1]
Refer to SOT666 standard mounting conditions.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
2
collector mounting
pad.
[4]
Solder points at pins 2, 3, 5 and 6.
I
FSM
non-repetitive peak forward
current
square wave
[1]
-
t
p
= 1
s
-
4.5
A
t
p
= 1 ms
-
1
A
t
p
= 1 s
-
0.5
A
P
tot
total power dissipation
SOT666
T
amb
25
C
[2] [3]
-
180
mW
SOT363
T
sp
= 85
C
[4]
-
250
mW
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
Table 6:
Limiting values
...continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
SOT666
[1] [2]
-
-
700
K/W
[2] [3]
-
-
410
K/W
R
th(j-s)
thermal resistance from junction
to soldering point
SOT363
[4]
-
-
260
K/W
9397 750 13856
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 10 September 2004
4 of 12
Philips Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
7.
Characteristics
[1]
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
; measured at I
R
= 1 mA.
[2]
When switched from I
F
= 10 mA; t
r
= 20 ns.
Table 8:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V
F
forward voltage
see
Figure 1
I
F
= 1 mA
-
-
715
mV
I
F
= 10 mA
-
-
855
mV
I
F
= 50 mA
-
-
1
V
I
F
= 150 mA
-
-
1.25
V
I
R
reverse current
see
Figure 3
V
R
= 25 V
-
-
30
nA
V
R
= 75 V
-
-
1
A
V
R
= 25 V; T
j
= 150
C
-
-
30
A
V
R
= 75 V; T
j
= 150
C
-
-
50
A
C
d
diode
capacitance
V
R
= 0 V; f = 1 MHz;
see
Figure 4
-
-
1.5
pF
t
rr
reverse recovery
time
see
Figure 5
[1]
-
-
4
ns
V
fr
forward recovery
voltage
see
Figure 6
[2]
-
-
1.75
V
9397 750 13856
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 10 September 2004
5 of 12
Philips Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Based on square wave currents.
T
j
= 25
C prior to surge.
Fig 1.
Forward current as a function of forward
voltage.
Fig 2.
Maximum permissible non-repetitive peak
forward current as a function of pulse duration.
f = 1 MHz; T
j
= 25
C.
Fig 3.
Reverse current as a function of junction
temperature.
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values.
0
2
300
I
F
(mA)
0
100
200
mbg382
1
V
F
(V)
(1)
(2)
(3)
mgw103
t
p
(
s)
1
10
4
10
3
10
10
2
1
10
I
FSM
(A)
10
-
1
10
5
10
4
10
200
0
mga884
100
T
j
(
C
)
I
R
(nA)
10
3
10
2
75 V
25 V
typ
max
V
R
= 75 V
typ
0
8
16
12
4
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF)
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