1999 Apr 22
2
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
FEATURES
Small ceramic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular ceramic SMD
SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
k
a
cathode mark
top view
side view
bottom view
a
k
Marking code: A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
note 1
-
250
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; see Fig.2; note 1
-
400
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 Apr 22
3
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
-
715
mV
I
F
= 10 mA
-
855
mV
I
F
= 50 mA
-
1
V
I
F
= 150 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= 25 V
-
30
nA
V
R
= 75 V
-
1
A
V
R
= 25 V; T
j
= 150
C
-
30
A
V
R
= 75 V; T
j
= 150
C
-
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
1.5
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
-
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
-
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
200
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
315
K/W
1999 Apr 22
4
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible total power dissipation
as a function of ambient temperature.
0
100
200
500
0
MSA570
250
Ptot
(mW)
T ( C)
o
amb
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 Apr 22
5
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
Fig.5
Reverse current as a function of
junction temperature.
10
5
10
4
10
3
10
2
10
200
0
MSA563
100
I R
(nA)
T ( C)
o
j
75 V
25 V
V = 75 V
R
Dotted line: maximum values.
Solid line: typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
4
8
12
16
0.6
0
0.4
0.2
0.5
MBH285
VR (V)
Cd
(pF)
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