1999 Feb 09
2
Philips Semiconductors
Product specification
General purpose diode
BAS321
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A7
handbook, halfpage
1
2
MAM406
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
250
V
V
R
continuous reverse voltage
-
200
V
I
F
continuous forward current
see Fig. 2; note 1
-
250
mA
I
FRM
repetitive peak forward current
t
p
< 0.5 ms;
0.25
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig. 4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 10 ms
-
1.7
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 Feb 09
3
Philips Semiconductors
Product specification
General purpose diode
BAS321
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig. 3
I
F
= 100 mA
1
V
I
F
= 200 mA
1.25
V
I
R
reverse current
see Fig. 5
V
R
= 200 V
100
nA
V
R
= 200 V; T
j
= 150
C
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig. 6
2
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
; measured at
I
R
= 3 mA; see Fig.8
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering
point
T
s
= 90
C; note 1
130
K/W
R
th j-a
thermal resistance from junction to ambient
note 2
366
K/W
1999 Feb 09
4
Philips Semiconductors
Product specification
General purpose diode
BAS321
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0
50
100
200
Tamb (
C)
IF
(mA)
300
0
100
200
150
MBK927
Fig.3
Forward current as a function of
forward voltage.
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
handbook, halfpage
0
2
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 Feb 09
5
Philips Semiconductors
Product specification
General purpose diode
BAS321
Fig.5
Reverse current as a function of
junction temperature.
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
handbook, halfpage
10
2
10
200
0
MBG381
100
Tj (
o
C)
IR
(
A)
1
10
2
10
1
(1)
(2)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
4
8
6
2
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7
Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
handbook, halfpage
0
50
100
200
Tamb (
C)
VR
(V)
300
0
100
200
150
MBK926
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