DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 10
DISCRETE SEMICONDUCTORS
BAS32L
High-speed diode
1/3 page (Datasheet)
M3D054
1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
BAS32L
FEATURES
Small hermetically sealed glass
SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching
Fast logic applications.
DESCRIPTION
The BAS32L is a high-speed switching diode fabricated in planar technology,
and encapsulated in the small hermetically sealed glass SOD80C SMD
package.
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by black band.
handbook, 4 columns
MAM061
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
75
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
200
mA
I
FRM
repetitive peak forward current
-
450
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 10
3
Philips Semiconductors
Product specification
High-speed diode
BAS32L
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 5 mA
620
750
mV
I
F
= 100 mA
-
1000
mV
I
F
= 100 mA; T
j
= 100
C
-
930
mV
I
R
reverse current
see Fig.5
V
R
= 20 V
-
25
nA
V
R
= 75 V
-
5
A
V
R
= 20 V; T
j
= 150
C
-
50
A
V
R
= 75 V; T
j
= 150
C
-
100
A
V
(BR)R
reverse breakdown voltage
I
R
= 100
A
100
-
V
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
2
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 50 mA;
t
r
=
20 ns; see Fig.8
-
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
350
K/W
1996 Sep 10
4
Philips Semiconductors
Product specification
High-speed diode
BAS32L
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0
100
200
300
200
0
100
MBG451
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 10
5
Philips Semiconductors
Product specification
High-speed diode
BAS32L
Fig.5
Reverse current as a function of
junction temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
(1)
(2)
1
IR
(
A)
MGD006
(3)
(1) V
R
= 75 V; maximum values.
(2) V
R
= 75 V; typical values.
(3) V
R
= 20 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
1996 Sep 10
6
Philips Semiconductors
Product specification
High-speed diode
BAS32L
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) I
R
= 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
t r
t
t p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
V fr
t
output
signal
V
1996 Sep 10
7
Philips Semiconductors
Product specification
High-speed diode
BAS32L
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD80C.
Dimensions in mm.
handbook, full pagewidth
MBA390 - 2
1.60
1.45
3.7
3.3
0.3
0.3
O
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