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Электронный компонент: BAS40L

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DATA SHEET
Product specification
2003 May 20
DISCRETE SEMICONDUCTORS
BAS40L
Schottky barrier diode
M3D891
BOTTOM VIEW
2003 May 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
FEATURES
Low diode capacitance
Low forward voltage
Guard ring protected
High breakdown voltage
Leadless ultra small plastic package
(1 mm
0.6 mm
0.5 mm)
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
Power dissipation comparable to SOT23.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection. Encapsulated in a SOD882 leadless
ultra small plastic package.
handbook, halfpage
MDB391
Bottom view
Fig.1 Simplified outline (SOD882) and symbol.
Marking code: S6.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
120
mA
I
FRM
repetitive peak forward current
t
p
1s;
0.5
-
120
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
200
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
2003 May 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
continuous forward voltage
see Fig.2
I
F
= 1 mA
380
mV
I
F
= 10 mA
500
mV
I
F
= 40 mA
1
V
I
R
continuous reverse current
V
R
= 30 V; see Fig.3; note 1
1
A
V
R
= 40 V; see Fig.3; note 1
10
A
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.5
5
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
2003 May 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
GRAPHICAL DATA
handbook, halfpage
10
2
10
-
1
10
-
2
10
1
0
MLC361
0.6
0.8
0.4
0.2
1
VF (V)
IF
(mA)
(1)
(2)
(3)
(4)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
handbook, halfpage
10
3
10
2
10
-
1
10
-
2
10
1
0
MHC512
20
10
30
VR (V)
IR
(
A)
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
MLC364
1
10
10
2
1
10
3
10
10
2
10
1
r diff
(
)
I (mA)
F
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
handbook, halfpage
0
10
20
30
5
0
4
MHC513
3
2
1
VR (V)
Cd
(pF)
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2003 May 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
PACKAGE OUTLINE
UNIT
A
1
max.
A
(1)
b
e
1
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.50
0.46
0.55
0.47
0.03
0.62
0.55
0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882
03-04-16
03-04-17
D
E
1.02
0.95
L
E
(2)
2
1
b
A1
A
D
L
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
0
0.5
1 mm
scale
e1
2003 May 20
6
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 May 20
7
Philips Semiconductors
Product specification
Schottky barrier diode
BAS40L
NOTES
Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/01/pp
8
Date of release:
2003 May 20
Document order number:
9397 750 11311