DATA SHEET
Product specification
Supersedes data of 1996 Mar 19
1999 Mar 26
DISCRETE SEMICONDUCTORS
BAS70W series
Schottky barrier (double) diodes
ook, halfpage
M3D102
1999 Mar 26
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes. Single
diodes (BAS70W) and double diodes
with different pinning (BAS70-04W;
-05W; -06W) are available.
The diodes are encapsulated in a
SOT323 very small plastic SMD
package.
PINNING
PIN
BAS70
W
-04W
-05W
-06W
1
a
1
a
1
a
1
k
1
2
n.c.
k
2
a
2
k
2
3
k
1
k
1
, a
2
k
1
, k
2
a
1
, a
2
Fig.1
Simplified outline
(SOT323) and pin
configuration.
handbook, 2 columns
3
1
2
MBC870
Top view
Fig.2
BAS70W single diode
configuration (symbol).
3
1
2
n.c.
MLC357
Fig.3
BAS70-04W diode
configuration (symbol).
3
1
2
MLC358
Fig.4
BAS70-05W diode
configuration (symbol).
3
1
2
MLC359
Fig.5
BAS70-06W diode
configuration (symbol).
3
1
2
MLC360
MARKING
Note
1.
= -: Made in Hong Kong.
= t: Made in Malaysia.
TYPE NUMBER
MARKING
CODE
(1)
BAS70W
73
BAS70-04W
74
BAS70-05W
75
BAS70-06W
76
1999 Mar 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
70
V
I
F
continuous forward current
-
70
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
70
mA
I
FSM
non-repetitive peak forward current
t
p
<
10 ms
-
100
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
410
mV
I
F
= 10 mA
750
mV
I
F
= 15 mA
1
V
I
R
reverse current
V
R
= 50 V; note 1; see Fig.7
100
nA
V
R
= 70 V; note 1; see Fig.7
10
A
charge carrier life time (Krakauer method)
I
F
= 5 mA
100
ps
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.9
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
1999 Mar 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
GRAPHICAL DATA
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
Fig.6
Forward current as a function of forward
voltage; typical values.
10
0
0.2
0.4
0.6
0.8
1
1
I F
(mA)
V (V)
F
MRA803
(1)
(4)
(2)
(3)
10
2
10
1
10
2
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
0
20
40
60
80
V (V)
R
IR
(
A)
(1)
(3)
(2)
2
10
1
10
2
10
3
f = 10 kHz.
Fig.8
Differential forward resistance as a function
of forward current; typical values.
10
1
1
10
rdiff
IF (mA)
MRA802
10
-
1
10
2
10
2
10
3
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
0
0.5
1
1.5
2
0
20
40
60
80
MRA804
Cd
(pF)
V (V)
R
1999 Mar 26
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70W series
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
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