DATA SHEET
Product specification
Supersedes data of October 1993
1996 Mar 19
DISCRETE SEMICONDUCTORS
BAT54W series
Schottky barrier (double) diodes
ook, halfpage
M3D088
1996 Mar 19
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
FEATURES
Low forward voltage
Guard ring protected
Very small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN
BAT54
W
AW
CW
SW
1
a
k
1
a
1
a
1
2
n.c.
k
2
a
2
k
2
3
k
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.1
Simplified outline
(SOT323) and pin
configuration.
handbook, 2 columns
3
1
2
MBC870
Top view
Fig.2
BAT54W single diode
configuration (symbol).
3
1
2
n.c.
MLC357
Fig.3
BAT54AW diode
configuration (symbol).
3
1
2
MLC360
Fig.4
BAT54CW diode
configuration (symbol).
3
1
2
MLC359
Fig.5
BAT54SW diode
configuration (symbol).
3
1
2
MLC358
MARKING
TYPE NUMBER
MARKING
CODE
BAT54W
L4
BAT54AW
42
BAT54CW
43
BAT54SW
44
1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
<
10 ms
-
600
mA
P
tot
total power dissipation (per package)
T
amb
25
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.6
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; note 1; see Fig.7
2
A
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA: see Fig.9
5
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.8
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
1996 Mar 19
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.6
Forward current as a function of forward
voltage; typical values.
0
10
20
30
V (V)
R
10
3
I
R
(
A)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
0
10
20
30
0
5
10
15
V (V)
R
C d
(pF)
MSA891
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
Fig.9 Reverse recovery definitions.
handbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
1996 Mar 19
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
handbook, full pagewidth
0.25
0.10
B
0.2
0.2
A
A
M
M
1
2
3
0.65
1.3
2.2
1.8
0.40
0.30
B
1.35
1.15
2.2
2.0
detail X
X
1.1
max
0.1
0.0
1.0
0.8
0.3
0.1
0.2
MBC871
Dimensions in mm.
Fig.10 SOT323.
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