1999 May 26
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
FEATURES
Ultra high switching speed
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection
in a small SOT23 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: L6p = made in Hong Kong; L6t = made in Malaysia
.
handbook, halfpage
MAM394
2
n.c.
1
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
500
mA
I
FSM
non-repetitive peak forward current
t
p
<
10 ms
-
2
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
1999 May 26
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
I
F
= 500 mA; see Fig.2
-
550
mV
I
R
reverse current
V
R
= 35 V; see Fig.3
-
100
A
V
R
= 35 V; T
j
= 100
C; see Fig.3
-
10
mA
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.4
60
90
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 26
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT720
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
VF (mV)
IF
(mA)
150
250
350
450
550
10
3
10
2
10
10
-
1
1
MBK578
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
30 V
R (V)
IR
(mA)
0
10
20
10
1
10
-
1
10
-
2
10
-
3
MBK579
(1)
(2)
(3)
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
40
30
VR (V)
Cd
(pF)
0
10
20
10
2
10
1
MBK577
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