2004 Jan 26
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT760
FEATURES
Ultra high-speed switching
Very low forward voltage
Guard ring protected
Very small SMD plastic package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection in a SOD323 (SC-76) very small SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
k, 4 columns
1
2
MGU328
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
Marking code: A4.
The marking bar indicates the cathode.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAT760
-
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
20
V
I
F
continuous forward current
-
1
A
I
FSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
-
5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
2004 Jan 26
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT760
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Notes
1. Mounted on printed-circuit board 10
10 mm
2
Cu.
2. Mounted on printed-circuit board 40
40 mm
2
Cu.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
continuous forward voltage
see Fig.2 and note 1
I
F
= 10 mA
240
270
mV
I
F
= 100 mA
300
350
mV
I
F
= 1 A
480
550
mV
I
R
reverse current
see Fig.3 and note 1
V
R
= 5 V
5
10
A
V
R
= 8 V
7
20
A
V
R
= 15 V
10
50
A
C
d
diode capacitance
V
R
= 5 V; f = 1 MHz; see Fig.4 19
25
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
note 1
220
K/W
note 2
180
K/W
2004 Jan 26
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT760
GRAPHICAL DATA
handbook, halfpage
0.6
0.4
0.2
0
(1)
(2)
(3)
VF (V)
IF
(mA)
10
3
10
2
10
1
10
-
1
MLD562
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
25
0
(1)
(2)
VR (V)
IR
(
A)
5
10
15
20
10
5
10
4
10
3
10
2
10
1
MLD563
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
5
VR (V)
Cd
(pF)
10
20
80
60
20
0
40
15
MLD564
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
T
amb
= 25
C; f = 1 MHz.
2004 Jan 26
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAT760
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD323
SC-76
SOD323
99-09-13
03-12-17
Note
1. The marking bar indicates the cathode
UNIT
A
mm
0.05
1.1
0.8
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
A
1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface mounted package; 2 leads
0
1
(1)
2
1
2 mm
scale
b
p
c
D
E
H
D
Q
0.25
0.15
L
p
v
0.2
A
D
A
E
L
p
b
p
detail X
A
1
c
Q
H
D
v
A
M
X
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