1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT85
FEATURES
Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
MAM193
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
F(AV)
average forward current
PCB mounting, lead length = 4 mm;
V
RWM
= 25 V; a = 1.57;
= 0.5;
T
amb
= 50
C; see Fig.2
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
10 ms
-
5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
1996 Mar 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT85
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; see Fig.4
2
A
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.6
4
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.5
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
320
K/W
1996 Mar 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT85
GRAPHICAL DATA
Fig.2 Derating curve.
handbook, halfpage
0
50
100
150
200
250
0
50
100
150
IF(AV)
(mA)
T ( C)
amb
o
MRA540
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(1) T
amb
= 85
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
(nA)
I
R
5
10
4
10
3
10
2
10
10
1
-
1
30
20
V
R
(V)
10
0
MGC682
(1)
(2)
(3)
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
handbook, halfpage
0
10
20
V
R
(V)
30
12
(pF)
C
d
0
4
8
MGC681
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