Document Outline
- FEATURES
- DESCRIPTION
- APPLICATIONS
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- Untitled
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 17
DISCRETE SEMICONDUCTORS
BAV100 to BAV103
General purpose diodes
1/3 page (Datasheet)
M3D054
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
FEATURES
Small hermetically sealed glass
SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V
respectively
Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V
respectively
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
Switching in industrial equipment
e.g. oscilloscopes, digital
voltmeters and video output stages
in colour television.
DESCRIPTION
The BAV100 to BAV103 are switching diodes fabricated in planar technology,
and encapsulated in small hermetically sealed glass SOD80C SMD packages.
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by green band.
handbook, 4 columns
MAM061
k
a
1996 Sep 17
3
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAV100
-
60
V
BAV101
-
120
V
BAV102
-
200
V
BAV103
-
250
V
V
R
continuous reverse voltage
BAV100
-
50
V
BAV101
-
100
V
BAV102
-
150
V
BAV103
-
200
V
I
F
continuous forward current
see Fig.2; note 1
-
250
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
400
mW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1996 Sep 17
4
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
-
1.0
V
I
F
= 200 mA
-
1.25
V
I
R
reverse current
see Fig.5
BAV100
V
R
= 50 V
-
100
nA
V
R
= 50 V; T
j
= 150
C
-
100
A
BAV101
V
R
= 100 V
-
100
nA
V
R
= 100 V; T
j
= 150
C
-
100
A
BAV102
V
R
= 150 V
-
100
nA
V
R
= 150 V; T
j
= 150
C
-
100
A
BAV103
V
R
= 200 V
-
100
nA
V
R
= 200 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
5
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.8
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
375
K/W
1996 Sep 17
5
Philips Semiconductors
Product specification
General purpose diodes
BAV100 to BAV103
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBH278
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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