1996 Sep 17
2
Philips Semiconductors
Product specification
High-speed diode
BAV105
FEATURES
Small hermetically sealed glass
SMD package
High switching speed: max. 6 ns
General application
Continuous reverse voltage:
max. 60 V
Repetitive peak reverse voltage:
max. 60 V
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV105 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the small hermetically sealed glass SOD80C SMD
package.
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by black band.
handbook, 4 columns
MAM061
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
60
V
V
R
continuous reverse voltage
-
60
V
I
F
continuous forward current
see Fig.2; note 1
-
300
mA
I
FRM
repetitive peak forward current
-
600
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 17
3
Philips Semiconductors
Product specification
High-speed diode
BAV105
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 10 mA
-
750
mV
I
F
= 200 mA
-
1000
mV
I
F
= 500 mA
-
1.25
V
I
F
= 200 mA; T
j
= 100
C
-
950
mV
I
R
reverse current
see Fig.5
V
R
= 60 V
-
100
nA
V
R
= 60 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 400 mA to
I
R
= 400 mA; R
L
= 100
; measured at
I
R
= 40 mA; see Fig.7
-
6
ns
V
fr
forward recovery voltage
when switched from I
F
= 400 mA;
t
r1
=
30 ns; see Fig.8
-
2
V
when switched from I
F
= 400 mA;
t
r2
=
100 ns; see Fig.8
-
1.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
350
K/W
1996 Sep 17
4
Philips Semiconductors
Product specification
High-speed diode
BAV105
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0
100
200
400
300
200
0
100
MBG454
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG457
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 17
5
Philips Semiconductors
Product specification
High-speed diode
BAV105
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
1
IR
(
A)
MGD011
(1)
(2)
(3)
(1) V
R
= 60 V; maximum values.
(2) V
R
= 60 V; typical values.
(3) V
R
= 30 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
VR (V)
4
Cd
(pF)
3
1
0
2
MGD002
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