DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 17
DISCRETE SEMICONDUCTORS
BAV23
General purpose double diode
book, halfpage
M3D070
1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose double diode
BAV23
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 200 V
Repetitive peak reverse voltage:
max. 250 V
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
General purpose where high
breakdown voltages are required.
DESCRIPTION
The BAV23 consists of two general
purpose diodes fabricated in planar
technology, and encapsulated in the
small plastic SMD SOT143 package.
The diodes are not connected.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
anode (a2)
4
anode (a1)
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: L30.
handbook, halfpage
4
3
2
1
Top view
MAM059
2
3
4
1
1996 Sep 17
3
Philips Semiconductors
Product specification
General purpose double diode
BAV23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
250
V
V
RRM
repetitive peak reverse voltage
series connection
500
V
V
R
continuous reverse voltage
-
200
V
V
R
continuous reverse voltage
series connection
-
400
V
I
F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
225
mA
double diode loaded; see Fig.2;
note 1
-
125
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 10 ms
-
1.7
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1996 Sep 17
4
Philips Semiconductors
Product specification
General purpose double diode
BAV23
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
-
1.0
V
I
F
= 200 mA
-
1.25
V
V
F
forward voltage
series connection; see Fig.3
I
F
= 100 mA
-
2.0
V
I
F
= 200 mA
-
2.5
V
I
R
reverse current
see Fig.5
V
R
= 200 V
-
100
nA
V
R
= 200 V; T
j
= 150
C
-
100
A
I
R
reverse current
series connection
-
V
R
= 400 V
-
100
nA
V
R
= 400 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
5
pF
series connection; f = 1 MHz;
V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.7
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
360
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1996 Sep 17
5
Philips Semiconductors
Product specification
General purpose double diode
BAV23
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
300
0
100
200
MBD033
100
I F
(mA)
T ( C)
amb
o
single diode loaded
double diode loaded
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
2
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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