DATA SHEET
Product specification
File under Discrete Semiconductors, SC01
1997 Dec 19
DISCRETE SEMICONDUCTORS
BAV70T
High-speed double diode
M3D173
1997 Dec 19
2
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in a
common cathode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
anode 1
2
anode 2
3
common cathode
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
Marking code: A4.
handbook, halfpage
1
2
3
MAM368
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (unless otherwise specified)
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
T
s
= 90
C; see Fig.2
single diode loaded
-
150
mA
both diodes loaded
-
75
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
s
= 90
C; one diode loaded
-
170
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
+150
C
1997 Dec 19
3
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
0.715
V
I
F
= 10 mA
0.855
V
I
F
= 50 mA
1
V
I
F
= 150 mA
1.25
V
I
R
reverse current
see Fig.5
V
R
= 25 V
30
nA
V
R
= 75 V
2
A
V
R
= 25 V; T
j
= 150
C
60
A
V
R
= 75 V; T
j
= 150
C
100
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.6
1.5
pF
t
rr
reverse recovery time
switching from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
; measured at I
R
= 1 mA; see Fig.7
4
ns
V
fr
forward recovery voltage
switched to I
F
= 10 mA; t
r
= 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
one diode loaded
350
K/W
1997 Dec 19
4
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current per diode as a function of
soldering point temperature.
(1) One diode loaded.
(2) Both diodes loaded.
handbook, halfpage
0
IF
(mA)
300
200
100
0
200
Ts (
C)
100
MBK249
(1)
(2)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1997 Dec 19
5
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
Fig.5
Reverse current as a function of
junction temperature.
10
2
10
200
0
MGA885
100
T ( C)
j
o
IR
( A)
1
75 V
25 V
typ
max
typ
10
2
10
1
V = 75 V
R
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
8
16
12
4
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
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