DATA SHEET
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21
DISCRETE SEMICONDUCTORS
BAV756S
High-speed switching diode array
MBD128
1997 Oct 21
2
Philips Semiconductors
Product specification
High-speed switching diode array
BAV756S
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV756S consists of four
high-speed switching diodes
fabricated in planar technology, and
encapsulated in the small SMD
SOT363 plastic package. One pair of
diodes has a common cathode; the
other pair has a common anode.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
cathode (k1)
3
common anode
4
cathode (k2)
5
anode (a2)
6
common cathode
handbook, halfpage
6
5
4
1
2
3
MGL158
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A7t.
MSA370
1
2
3
6
5
4
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
single diode loaded; see Fig.2
-
250
mA
all diodes loaded; see Fig.2
-
100
mA
I
FRM
repetitive peak forward current
-
450
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
s
= 60
C; note 1
-
350
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
1997 Oct 21
3
Philips Semiconductors
Product specification
High-speed switching diode array
BAV756S
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
715
mV
I
F
= 10 mA
855
mV
I
F
= 50 mA
1
V
I
F
= 150 mA
1.25
V
I
R
reverse current
see Fig.5
V
R
= 25 V
30
nA
V
R
= 75 V
2.5
A
V
R
= 25 V; T
j
= 150
C
60
A
V
R
= 75 V; T
j
= 150
C
100
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz
2
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
; measured at I
R
= 1 mA; see Fig.6
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 10 mA; t
r
= 20 ns; see Fig.7
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
255
K/W
1997 Oct 21
4
Philips Semiconductors
Product specification
High-speed switching diode array
BAV756S
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of soldering point
temperature.
0
200
300
0
100
200
MBK148
100
Ts (
C)
I F
(mA)
single diode loaded
all diodes loaded
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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