1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
BAV99W
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAV99W consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
3
2
1
Top view
MAM094
2
1
3
Marking code: A7.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
single diode loaded; note 1;
see Fig.2
-
150
mA
double diode loaded; note 1;
see Fig.2
-
130
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 May 11
3
Philips Semiconductors
Product specification
High-speed double diode
BAV99W
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
715
mV
I
F
= 10 mA
855
mV
I
F
= 50 mA
1
V
I
F
= 150 mA
1.25
V
I
R
reverse current
see Fig.5
V
R
= 25 V
30
nA
V
R
= 75 V
1
A
V
R
= 25 V; T
j
= 150
C
30
A
V
R
= 75 V; T
j
= 150
C
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
1.5
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
1999 May 11
4
Philips Semiconductors
Product specification
High-speed double diode
BAV99W
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
200
0
100
MGA889
100
IF
(mA)
T ( C)
amb
o
single diode loaded
double diode loaded
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 May 11
5
Philips Semiconductors
Product specification
High-speed double diode
BAV99W
Fig.5
Reverse current as a function of junction
temperature.
10
5
10
4
10
200
0
MGA884
100
T ( C)
j
o
IR
(nA)
10
3
10
2
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
8
16
12
4
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
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