Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
DISCRETE SEMICONDUCTORS
BB215
UHF variable capacitance diode
alfpage
M3D155
1996 May 03
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB215
FEATURES
Excellent linearity
Matched to 3%
Small hermetically sealed glass
SMD package
C28: 2 pF; ratio: 8.3
Low series resistance.
APPLICATIONS
Electronic tuning in UHF television
tuners
VCO.
DESCRIPTION
The BB215 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD80 glass SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
20
mA
T
stg
storage temperature
-
55
+150
C
T
j
operating junction temperature
-
55
+100
C
handbook, 4 columns
MAM186 - 1
k
a
Fig.1 Simplified outline (SOD80) and symbol.
Cathode side indicated by a white band.
Second green band for type identification.
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Note
1. V
R
is the value at which C
d
= 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
R
reverse current
V
R
= 28 V; see Fig.3
-
-
10
nA
V
R
= 28 V; T
j
= 85
C; see Fig.3
-
-
200
nA
r
s
diode series resistance
f = 470 MHz; note 1
-
-
0.75
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Figs 2 and 4
-
16.5
18
pF
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
1.8
-
2.2
pF
capacitance ratio
f = 1 MHz
7.6
8.3
-
capacitance matching
V
R
= 0.5 to 28 V
-
-
3
%
C
d 1V
(
)
C
d 28V
(
)
--------------------
C
d
C
d
----------
1996 May 03
3
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB215
GRAPHICAL DATA
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
f = 1 MHz; T
j
= 25
C
.
handbook, full pagewidth
0
20
MBE874
10
2
10
1
10
-
1
4
8
12
16
Cd
(pF)
V
R
(V)
Fig.3
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
100
0
10
MLC816
10
2
10
3
50
IR
(nA)
T ( C)
j
o
Fig.4
Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
handbook, halfpage
MLC815
1
10
10
2
10
3
10
4
10
5
10
1
(K
-
1
)
V (V)
R
d
TC
T
j
= 0 to 85
C.
1996 May 03
4
Philips Semiconductors
Product specification
UHF variable capacitance diode
BB215
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Cathode side indicated by a white band.
Second green band for type identification.
Fig.5 SOD80.
handbook, full pagewidth
MBA388 - 2
1.7
1.5
3.7
3.3
0.3
0.3
O
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