1999 Apr 26
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
FEATURES
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and boardspace
No mutual interference between the transistors.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP double transistor in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
TYPE NUMBER
MARKING CODE
BC857BS
3Ft
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
handbook, halfpage
1
3
2
4
5
6
Top view
MAM339
1
3
2
TR1
TR2
6
4
5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
300
mW
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per device
R
th j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
200
-
450
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
-
100
mV
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
-
400
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
755
-
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V
-
600
-
655
-
750
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
-
2.2
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
=
-
500 mV; f = 1 MHz
-
10
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
-
MHz
1999 Apr 26
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC857BS
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
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