DATA SHEET
Product specification
Supersedes data of 1998 Jul 16
1999 Apr 08
DISCRETE SEMICONDUCTORS
BC869
PNP medium power transistor
book, halfpage
M3D109
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistor
BC869
FEATURES
High current (max. 1 A)
Low voltage (max. 20 V).
APPLICATIONS
Low voltage, high current LF applications.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
1
2
3
Bottom view
MAM297
3
2
1
MARKING
TYPE NUMBER
MARKING CODE
BC869
CEC
BC869-16
CGC
BC869-25
CHC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
32
V
V
CEO
collector-emitter voltage
open base
-
-
20
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
2
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.35
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP medium power transistor
BC869
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT89 in the General Part of associated Handbook".
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
93
K/W
R
th j-s
thermal resistance from junction to soldering point
13
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
25 V
-
-
-
100
nA
I
E
= 0; V
CB
=
-
25 V; T
j
= 150
C
-
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
5 mA; V
CE
=
-
10 V; see Fig.2
50
-
-
I
C
=
-
500 mA; V
CE
=
-
1 V; see Fig.2
100
-
375
I
C
=
-
1 A; V
CE
=
-
1 V; see Fig.2
60
-
-
DC current gain
I
C
=
-
500 mA; V
CE
=
-
1 V; see Fig.2
BC869-16
100
-
250
BC869-25
160
-
375
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
1 A; I
B
=
-
100 mA
-
-
-
500
mV
V
BE
base-emitter voltage
I
C
=
-
5 mA; V
CE
=
-
10 V
-
-
620
-
mV
I
C
=
-
1 A; V
CE
=
-
1 V
-
-
-
1
V
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz 40
-
-
MHz
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP medium power transistor
BC869
Fig.2 DC current gain; typical values.
V
CE
=
-
1 V.
handbook, full pagewidth
0
200
400
hFE
100
300
MGD845
-
10
-
1
-
1
IC (mA)
-
10
-
10
2
-
10
4
-
10
3
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP medium power transistor
BC869
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89
97-02-28
w
M
e
1
e
E
HE
B
0
2
4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
1
2
3
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
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