Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
1997 Jun 04
DISCRETE SEMICONDUCTORS
BC177
PNP general purpose transistor
*
M3D125
1997 Jun 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to the case
Fig.1
Simplified outline (TO-18; SOT18)
and symbol.
handbook, halfpage
MAM263
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
I
CM
peak collector current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
300
mW
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
125
500
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
MHz
1997 Jun 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
0.5
K/mW
R
th j-c
thermal resistance from junction to case
0.2
K/mW
1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. V
BE
decreases by about
-
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
20 V
-
-
1
-
15
nA
I
E
= 0; V
CB
=
-
20 V; T
j
= 150
C
-
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
50
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
125
140
500
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
BC177A
125
180
260
BC177B
240
290
500
V
CEsat
collector-emitter saturation voltage I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
75
-
300
mV
I
C
=
-
100 mA; I
B
=
-
5 mA
-
-
250
-
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
10 mA; I
B
=
-
0.5 mA
-
-
700
-
mV
I
C
=
-
100 mA; I
B
=
-
5 mA
-
-
850
-
mV
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V; note 1
-
600
-
650
-
750
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
4
6
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
1997 Jun 04
5
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
TO-18
B11/C7 type 3
97-04-18
a
k
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
w
A
M
M
B
M
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
w
mm
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
A
a
b
D
D1
j
k
L
2.54
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