1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Medium power (max. 1.3 W).
APPLICATIONS
Audio, telephony and automotive applications
Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BCP51
-
-
45
V
BCP52
-
-
60
V
BCP53
-
-
100
V
V
CEO
collector-emitter voltage
open base
BCP51
-
-
45
V
BCP52
-
-
60
V
BCP53
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
1.5
A
I
BM
peak base current
-
-
0.2
A
P
tot
total power dissipation
T
amb
25
C; note 1
-
1.3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
95
K/W
R
th j-s
thermal resistance from junction to soldering point
14
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V
-
-
-
100
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 125
C
-
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
2 V; see Fig.2
I
C
=
-
5 mA
40
-
-
I
C
=
-
150 mA
63
-
250
I
C
=
-
500 mA
25
-
-
h
FE
DC current gain
I
C
= 150 mA; V
CE
=
-
2 V; see Fig.2
BCP53-10
63
-
160
BCP51-16; BCP52-16; BCP53-16
100
-
250
V
CEsat
collector-emitter saturation voltage
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
0.5
V
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
2 V
-
-
-
1
V
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V;
f = 100 MHz
-
115
-
MHz
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP medium power transistors
BCP51; BCP52; BCP53
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
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