DATA SHEET
Product specification
Supersedes data of 1997 Jan 29
1999 Apr 13
DISCRETE SEMICONDUCTORS
BCW31; BCW32; BCW33
NPN general purpose transistors
ok, halfpage
M3D088
1999 Apr 13
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BCW31; BCW32; BCW33
FEATURES
Low current (100 mA)
Low voltage (32 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
BCW31
D1
BCW32
D2
BCW33
D3
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
32
V
V
CEO
collector-emitter voltage
open base; I
C
= 2 mA
-
32
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 13
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 32 V
-
-
100
nA
I
E
= 0; V
CB
= 32 V; T
j
= 100
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 10
A; V
CE
= 5 V
BCW31
-
90
-
BCW32
-
150
-
BCW33
-
270
-
DC current gain
I
C
= 2 mA; V
CE
= 5 V
BCW31
110
-
220
BCW32
200
-
450
BCW33
420
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
120
250
mV
I
C
= 50 mA; I
B
= 2.5 mA
-
210
-
mV
V
BEsat
base-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
750
-
mV
I
C
= 50 mA; I
B
= 2.5 mA
-
850
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
550
-
700
mV
C
c
collector capacitance
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
-
2.5
-
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
= 200
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
1999 Apr 13
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BCW31; BCW32; BCW33
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
1999 Apr 13
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BCW31; BCW32; BCW33
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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