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Электронный компонент: BCX17

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DATA SHEET
Product specification
Supersedes data of 1997 Feb 28
1999 May 31
DISCRETE SEMICONDUCTORS
BCX17; BCX18
PNP general purpose transistors
ook, halfpage
M3D088
1999 May 31
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
Saturated switching and driver applications e.g. for
industrial service
Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE
(1)
BCX17
T1
BCX18
T2
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BCX17
-
-
50
V
BCX18
-
-
30
V
V
CEO
collector-emitter voltage
open base
BCX17
-
-
45
V
BCX18
-
-
25
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
500
mA
I
CM
peak collector current
-
-
1
A
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 May 31
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. V
BE
decreases by approximately
-
2 mV/
C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
20 V
-
-
-
100
nA
I
E
= 0; V
CB
=
-
20 V; T
j
= 150
C
-
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
5 V
-
-
-
100
nA
h
FE
DC current gain
I
C
=
-
100 mA; V
CE
=
-
1 V
100
-
600
I
C
=
-
300 mA; V
CE
=
-
1 V
70
-
-
I
C
=
-
500 mA; V
CE
=
-
1 V
40
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
620
mV
V
BE
base-emitter voltage
I
C
=
-
500 mA; V
CE
=
-
1 V; note 1
-
-
-
1.2
V
C
c
collector capacitance
I
E
= I
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
9
-
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
80
-
-
MHz
1999 May 31
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
1999 May 31
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.