DATA SHEET
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
DISCRETE SEMICONDUCTORS
BD135; BD137; BD139
NPN power transistors
book, halfpage
M3D100
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BD135
-
45
V
BD137
-
60
V
BD139
-
100
V
V
CEO
collector-emitter voltage
open base
BD135
-
45
V
BD137
-
60
V
BD139
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
1.5
A
I
CM
peak collector current
-
2
A
I
BM
peak base current
-
1
A
P
tot
total power dissipation
T
mb
70
C
-
8
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
THERMAL CHARACTERISTICS
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
-
100
nA
I
E
= 0; V
CB
= 30 V; T
j
= 125
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
40
-
-
I
C
= 150 mA
63
-
250
I
C
= 500 mA
25
-
-
DC current gain
I
C
= 150 mA; V
CE
= 2 V;
(see Fig.2)
BD135-10; BD137-10; BD139-10
63
-
160
BD135-16; BD137-16; BD139-16
100
-
250
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 50 mA
-
-
0.5
V
V
BE
base-emitter voltage
I
C
= 500 mA; V
CE
= 2 V
-
-
1
V
f
T
transition frequency
I
C
= 50 mA; V
CE
= 5 V;
f = 100 MHz
-
190
-
MHz
DC current gain ratio of the
complementary pairs
I
C
= 150 mA;
V
CE
= 2 V
-
1.3
1.6
h
FE1
h
FE2
-----------
1999 Apr 12
4
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH729
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 2 V
1999 Apr 12
5
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e1
L
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.88
0.65
2.7
2.3
0.60
0.45
11.1
10.5
7.8
7.2
2.29
e
4.58
0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3
1.5
0.9
L1
(1)
max
2.54
SOT32
TO-126
97-03-04
0
2.5
5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads
SOT32
D
P1
P
E
e1
A
L
Q
c
bp
1
2
3
L1
w
M
e
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