DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 07
DISCRETE SEMICONDUCTORS
BD329
NPN power transistor
book, halfpage
M3D100
1997 Mar 07
2
Philips Semiconductors
Product specification
NPN power transistor
BD329
FEATURES
High current (max. 3 A)
Low voltage (max. 20 V).
APPLICATIONS
Especially for battery equipped applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD330.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
32
V
V
CEO
collector-emitter voltage
open base
-
-
20
V
I
CM
peak collector current
-
-
3
A
P
tot
total power dissipation
T
mb
45
C
-
-
15
W
h
FE
DC current gain
I
C
= 0.5 A; V
CE
= 1 V
85
-
375
f
T
transition frequency
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
-
130
-
MHz
1997 Mar 07
3
Philips Semiconductors
Product specification
NPN power transistor
BD329
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
32
V
V
CEO
collector-emitter voltage
open base
-
20
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
3
A
I
CM
peak collector current
-
3
A
I
BM
peak base current
-
1
A
P
tot
total power dissipation
T
mb
45
C
-
15
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
7
K/W
1997 Mar 07
4
Philips Semiconductors
Product specification
NPN power transistor
BD329
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 32 V
-
-
100
nA
I
E
= 0; V
CB
= 32 V; T
j
= 150
C
-
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 0.5 A; V
CE
= 1 V; see Fig.2
85
-
375
I
C
= 2 A; V
CE
= 1 V; see Fig.2
40
-
-
I
C
= 5 mA; V
CE
= 10 V
50
-
-
V
CEsat
collector-emitter saturation voltage
I
C
= 2 A; I
B
= 0.2 A
-
-
0.5
V
V
BE
base-emitter voltage
I
C
= 5 mA; V
CE
= 10 V
-
0.6
-
V
I
C
= 2 A; V
CE
= 1 V
-
-
1.2
V
f
T
transition frequency
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
-
130
-
MHz
DC current gain ratio of the
complementary pairs
I
C
= 0.5 A;
V
CE
= 1 V
-
-
1.6
h
FE1
h
FE2
-----------
Fig.2 DC current gain; typical values.
V
CE
= 1 V.
handbook, full pagewidth
0
100
300
250
200
150
50
MGD844
hFE
10
-
1
1
IC (mA)
10
10
2
10
4
10
3
1997 Mar 07
5
Philips Semiconductors
Product specification
NPN power transistor
BD329
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e1
L
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.88
0.65
2.7
2.3
0.60
0.45
11.1
10.5
7.8
7.2
2.29
e
4.58
0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3
1.5
0.9
L1
(1)
max
2.54
SOT32
TO-126
97-03-04
0
2.5
5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads
SOT32
D
P1
P
E
e1
A
L
Q
c
1
2
3
L1
w
M
e
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