DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 02
DISCRETE SEMICONDUCTORS
BDX42; BDX43; BDX44
NPN Darlington transistors
book, halfpage
M3D100
1997 Jul 02
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial switching applications such as:
print hammers
solenoids
relay and lamp drivers.
DESCRIPTION
NPN Darlington transistor in a TO-126; SOT32 plastic
package. PNP complements: BDX45 and BDX47.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to metal part of
mounting surface
3
base
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
1
2
3
Top view
MAM349
3
2
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BDX42
-
-
60
V
BDX43
-
-
80
V
BDX44
-
-
90
V
V
CES
collector-emitter voltage
V
BE
= 0
BDX42
-
-
45
V
BDX43
-
-
60
V
BDX44
-
-
80
V
I
C
collector current (DC)
-
-
1
A
P
tot
total power dissipation
T
amb
25
C
-
-
1.25
W
T
mb
100
C
-
-
5
W
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 10 V
1000
-
-
I
C
= 500 mA; V
CE
= 10 V
2000
-
-
f
T
transition frequency
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
-
200
-
MHz
1997 Jul 02
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BDX42
-
60
V
BDX43
-
80
V
BDX44
-
90
V
V
CES
collector-emitter voltage
V
BE
= 0
BDX42
-
45
V
BDX43
-
60
V
BDX44
-
80
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
2
A
I
B
base current (DC)
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
1.25
W
T
mb
100
C
-
5
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
10
K/W
1997 Jul 02
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
CBO
collector cut-off current
BDX42
I
E
= 0; V
CB
= 60 V
-
-
100
nA
BDX43
I
E
= 0; V
CB
= 80 V
-
-
100
nA
BDX44
I
E
= 0; V
CB
= 100 V
-
-
100
nA
I
CES
collector cut-off current
BDX42
V
BE
= 0; V
CE
= 45 V
-
-
50
nA
BDX43
V
BE
= 0; V
CE
= 60 V
-
-
50
nA
BDX44
V
BE
= 0; V
CE
= 80 V
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
-
50
nA
h
FE
DC current gain
V
CE
= 10 V; see Fig. 2
I
C
= 150 mA
1000
-
-
I
C
= 500 mA
2000
-
-
V
CEsat
collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.3
V
I
C
= 500 mA; I
B
= 0.5 mA; T
j
= 150
C
-
-
1.3
V
V
CEsat
collector-emitter saturation voltage
BDX42; BDX44
I
C
= 1 A; I
B
= 4 mA
-
-
1.6
V
I
C
= 1 A; I
B
= 4 mA; T
j
= 150
C
-
-
1.6
V
V
CEsat
collector-emitter saturation voltage
BDX43
I
C
= 1 A; I
B
= 1 mA
-
-
1.6
V
I
C
= 1 A; I
B
= 1 mA; T
j
= 150
C
-
-
1.8
V
V
BEsat
base-emitter saturation voltage
I
C
= 500 mA; I
B
= 0.5 mA
-
-
1.9
V
V
BEsat
base-emitter saturation voltage
I
C
= 1 A; I
B
= 4 mA
BDX42; BDX44
-
-
2.2
V
V
BEsat
base-emitter saturation voltage
I
C
= 1 A; I
B
= 1 mA
BDX43
-
-
2.2
V
f
T
transition frequency
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
-
0.5 mA
-
-
500
ns
t
d
delay time
-
-
200
ns
t
r
rise time
-
-
300
ns
t
off
turn-off time
-
-
1300
ns
t
s
storage time
-
-
950
ns
t
f
fall time
-
-
350
ns
1997 Jul 02
5
Philips Semiconductors
Product specification
NPN Darlington transistors
BDX42; BDX43; BDX44
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
-
1
1
IC (mA)
hFE
10
10
2
10
3
Fig.2 DC current gain; typical values.
V
CE
= 10 V.
ndbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
Fig.3 Test circuit for switching times.
V
i
= 10 V; T = 200
s; t
p
= 6
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 10 k
; R
B
= 10 k
; R
C
= 18
.
V
BB
=
-
1.8 V; V
CC
= 10.7 V.
Oscilloscope input impedance Z
i
= 50
.
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