Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING - SOT363
- QUICK REFERENCE DATA
- ORDERING INFORMATION
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS AMPLIFIER a
- GRAPHS FOR AMPLIFIER a
- DYNAMIC CHARACTERISTICS AMPLIFIER b
- GRAPHS FOR AMPLIFIER b
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
2003 Nov 17
DISCRETE SEMICONDUCTORS
BF1206
Dual N-channel dual-gate
MOS-FET
andbook, halfpage
MBD128
2003 Nov 17
2
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
analog television tuners.
DESCRIPTION
The BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor is
encapsulated in SOT363 micro-miniature plastic package.
PINNING - SOT363
PIN
DESCRIPTION
1
drain (b)
2
source
3
gate 1 (b)
4
gate 1 (a)
5
gate 2
6
drain (a)
handbook, halfpage
1
2
3
6
5
4
Top view
MAM480
AMP
a
d (a)
g2
g1 (a)
d (b)
s
g1 (b)
AMP
b
Fig.1 Simplified outline and symbol.
Marking code: L6-.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
drain-source voltage
-
-
6
V
I
D
drain current (DC)
-
-
30
mA
y
fs
forward transfer admittance
amp. a: I
D
= 18 mA
33
38
48
mS
amp. b: I
D
= 12 mA
29
34
44
mS
C
ig1-s
input capacitance at gate 1
amp. a: I
D
= 18 mA; f = 1 MHz
-
2.4
2.9
pF
amp. b: I
D
= 12 mA; f = 1 MHz
-
1.7
2.2
pF
C
rss
reverse transfer capacitance
f = 1 MHz
-
15
-
fF
X
mod
cross-modulation
amp. a: input level for k = 1% at
40 dB AGC
102
105
-
dB
V
amp. b: input level for k = 1% at
40 dB AGC
100
103
-
dB
V
NF
noise figure
amp. a: f = 400 MHz; I
D
= 18 mA
-
1.3
1.9
dB
amp. b: f = 800 MHz; I
D
= 12 mA
-
1.4
2.0
dB
amp. a: f = 11 MHz; I
D
= 18 mA
-
3
-
dB
amp. b: f = 11 MHz; I
D
= 12 mA
-
3.5
-
dB
2003 Nov 17
3
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
s
is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF1206
-
plastic surface mounted package; 6 leads
SOT363
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
drain-source voltage
-
6
V
I
D
drain current (DC)
-
30
mA
I
G1
gate 1 current
-
10
mA
I
G2
gate 2 current
-
10
mA
P
tot
total power dissipation
T
s
107
C; note 1
-
180
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
240
K/W
2003 Nov 17
4
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
handbook, halfpage
0
50
Ts (
C)
Ptot
(mW)
100
200
200
150
50
0
100
150
MLE257
Fig.2 Power derating curve.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. R
G1
connects gate 1 to V
GG
= 5 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
6
-
V
V
(BR)G1-SS
gate-source breakdown voltage
V
GS
= V
DS
= 0; I
G1-S
= 10 mA
6
10
V
V
(BR)G2-SS
gate-source breakdown voltage
V
GS
= V
DS
= 0; I
G2-S
= 10 mA
6
10
V
V
(F)S-G1
forward source-gate voltage
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
0.5
1.5
V
V
(F)S-G2
forward source-gate voltage
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
0.5
1.5
V
V
G1-S(th)
gate-source threshold voltage
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
0.3
1
V
V
G2-S(th)
gate-source threshold voltage
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
0.35
1
V
I
DSX
drain-source current
amp. a:
V
G2-S
= 4 V; V
DS
= 5 V; R
G
= 91 k
;
note 1
14
23
mA
amp. b:
V
G2-S
= 4 V; V
DS
= 5 V; R
G
= 150 k
;
note 1
9
17
mA
I
G1-S
gate cut-off current
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0
-
50
nA
I
G2-S
gate cut-off current
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0
-
20
nA
2003 Nov 17
5
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 18 mA; unless otherwise specified.
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; T
j
= 25
C
33
38
48
mS
C
ig1-ss
input capacitance at gate 1
f = 1 MHz
-
2.4
2.9
pF
C
ig2-ss
input capacitance at gate 2
f = 1 MHz
-
3.2
-
pF
C
oss
output capacitance
f = 1 MHz
-
1.1
-
pF
C
rss
reverse transfer capacitance f = 1 MHz
-
15
30
fF
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0
-
3
-
dB
f = 400 MHz; Y
S
= Y
S opt
-
1.3
1.9
dB
f = 800 MHz; Y
S
= Y
S opt
-
1.6
2.2
dB
G
tr
power gain
f = 200 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 0.5 mS; B
L
= B
L opt
; note 1
-
35
-
dB
f = 400 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
-
30
-
dB
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
-
23
-
dB
X
mod
cross-modulation
input level for k = 1%; f
w
= 50 MHz;
f
unw
= 60 MHz; note 2
at 0 dB AGC
90
-
-
dB
V
at 10 dB AGC
-
92
-
dB
V
at 40 dB AGC
102
105
-
dB
V
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