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Электронный компонент: BF423

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DATA SHEET
Product specification
Supersedes data of 1996 Dec 09
2004 Nov 10
DISCRETE SEMICONDUCTORS
BF421; BF423
PNP high voltage transistors
book, halfpage
M3D186
2004 Nov 10
2
Philips Semiconductors
Product specification
PNP high voltage transistors
BF421; BF423
FEATURES
Low feedback capacitance.
APPLICATIONS
Class-B video output stages in colour television and
professional monitor equipment.
DESCRIPTION
PNP transistors in a TO-92 plastic package.
NPN complements: BF420 and BF422.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
handbook, halfpage
1
3
2
MAM285
2
1
3
Fig.1
Simplified outline (TO-92) and symbol.
ORDERING INFORMATION
QUICK REFERENCE DATA
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF421
SC-43A
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BF423
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF421
-
-
300
V
BF423
-
-
250
V
V
CEO
collector-emitter voltage
open base
BF421
-
-
300
V
BF423
-
-
250
V
I
CM
peak collector current
-
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
830
mW
h
FE
DC current gain
V
CE
=
-
20 V; I
C
=
-
25 mA
50
-
C
re
feedback capacitance
V
CE
=
-
30 V; I
C
= i
c
= 0 A; f = 1 MHz
-
1.6
pF
f
T
transition frequency
V
CE
=
-
10 V; I
C
=
-
10 mA; f = 100 MHz
60
-
MHz
2004 Nov 10
3
Philips Semiconductors
Product specification
PNP high voltage transistors
BF421; BF423
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF421
-
-
300
V
BF423
-
-
250
V
V
CEO
collector-emitter voltage
open base
BF421
-
-
300
V
BF423
-
-
250
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
50
mA
I
CM
peak collector current
-
-
100
mA
I
BM
peak base current
-
-
50
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
830
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
=
-
200 V; I
E
= 0 A
-
-
10
nA
V
CB
=
-
200 V; I
E
= 0 A; T
j
= 150
C
-
-
10
A
I
EBO
emitter-base cut-off current
V
EB
=
-
5 V; I
C
= 0 A
-
-
50
nA
h
FE
DC current gain
V
CE
=
-
20 V; I
C
=
-
25 mA
50
-
V
CEsat
collector-emitter saturation voltage
I
C
=
-
30 mA; I
B
=
-
5 mA
-
-
0.6
V
C
re
feedback capacitance
V
CE
=
-
30 V; I
C
= i
c
= 0 A; f = 1 MHz
-
1.6
pF
f
T
transition frequency
V
CE
=
-
10 V; I
C
=
-
10 mA; f = 100 MHz
60
-
MHz
2004 Nov 10
4
Philips Semiconductors
Product specification
PNP high voltage transistors
BF421; BF423
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1
(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43A
97-02-28
04-06-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
2004 Nov 10
5
Philips Semiconductors
Product specification
PNP high voltage transistors
BF421; BF423
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.