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Электронный компонент: BF547

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BF547
NPN 1 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
FEATURES
Feedback capacitance typ. 1 pF
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is intended for VHF and UHF TV-tuner applications
and can be used as a mixer and/or oscillator.
DESCRIPTION
Low cost NPN transistor in a plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
Marking code: E16.
handbook, halfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
20
V
V
CBO
collector-base voltage
open emitter
-
30
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
CM
peak collector current
-
50
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
300
mW
f
T
transition frequency
I
C
= 15 mA; V
CE
10 V; f = 500 MHz
1.2
1.6
GHz
C
re
feedback capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
1
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
20
V
V
CBO
collector-base voltage
open emitter
-
30
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
CM
peak collector current
-
50
mA
P
tot
total power dissipation
up to T
s
= 70
C; note 1
-
300
mW
T
stg
storage temperature range
-
65
+150
C
T
j
junction temperature
-
150
C
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
from junction to soldering point
note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
100
nA
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 10 V
40
95
250
f
T
transition frequency
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
0.8
1.2
1.6
GHz
C
re
feedback capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
1
-
pF
G
UM
maximum unilateral power
gain; note 1
I
C
= 1 mA; V
CE
= 10 V; f = 100 MHz
-
20
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
-------------------------------------------------------------- dB
=
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBB401
150
Ts (
o
C)
Ptot
(mW)
Fig.3
DC current gain as a function of collector
current.
V
CE
= 10 V.
handbook, halfpage
140
60
100
MBB397
20
hFE
1
10
1
10
2
10
I (mA)
C
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
Fig.4
Feedback capacitance as a function of
collector-base voltage
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
1.6
0
0.8
0.1
MBB474
1
10
100
Cre
(pF)
VCB (V)
V
CE
= 10 V; f = 500 MHz.
Fig.5
Transition frequency as a function of
collector current.
handbook, halfpage
1.4
0.6
1.0
MBB399
0.2
1
10
fT
(GHz)
10
-
1
10
2
IC (mA)
V
CE
= 10 V; f = 100 MHz.
Fig.6
Maximum unilateral power gain as a
function of collector current.
handbook, halfpage
0
10
20
30
40
30
10
0
20
MBB407
IC (mA)
GUM
(dB)
Fig.7
Maximum unilateral power gain as a
function of frequency.
V
CE
= 10 V; I
C
= 15 mA.
handbook, halfpage
50
-
10
30
40
10
MBB408
10
2
10
3
10
4
20
f (MHz)
GUM
(dB)
10
0
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
I
C
/I
B
= 10.
Fig.8
Collector-emitter saturation voltage as a
function of collector current.
handbook, halfpage
MBB398
10
1
VCE sat
(V)
1
10
-
1
10
2
10
-
1
10
-
2
10
IC (mA)
V
CE
= 10 V; Z
S
= Z
L
= 50
; f = 100 MHz.
Fig.9
Common emitter noise figure as a function
of collector current.
handbook, halfpage
8
0
4
6
MBB409
1
10
10
2
2
F
(dB)
IC (mA)
10
-
1
V
CB
= 10 V.
Fig.10 Common base input admittance (Y
11
).
handbook, halfpage
10
60
0
-
60
-
80
-
20
MBB410
20
30
40
50
g11 (mS)
-
40
b11
(mS)
f = 1000 MHz
800
600
400
200
IE =
-
2 mA
-
5 mA
-
10 mA
V
CB
= 10 V.
Fig.11 Common base forward admittance (Y
21
).
handbook, halfpage
80
20
0
60
MBB413
0
10
40
-
5 mA
500
f = 1000 MHz
800
300
600
200
IE =
-
2 mA
-
10 mA
-
50
-
40
-
30
-
20
-
10
g21 (mS)
b21
(mS)