DATA SHEET
Product specification
File under Discrete Semiconductors, SC07
April 1991
DISCRETE SEMICONDUCTORS
BF990A
N-channel dual-gate MOS-FET
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
RF applications such as:
Television tuners with 12 V supply voltage
Professional communication equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3
g
2
gate 2
4
g
1
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: M87.
handbook, halfpage
s,b
d
g
1
g
2
4
3
2
1
Top view
MAM039
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
drain-source voltage
-
18
V
I
D
drain current
-
30
mA
P
tot
total power dissipation
up to T
amb
= 60
C
-
200
mW
T
j
junction temperature
-
150
C
transfer admittance
f = 1 kHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
19
-
mS
C
ig1-s
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
2.6
3
pF
C
rs
feedback capacitance
f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
25
-
fF
F
noise figure
f = 800 MHz; G
S
= 5 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
2
3
dB
Y
fs
April 1991
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
-
18
V
I
D
drain current (DC)
-
30
mA
I
G1-S
gate 1-source current
-
10
mA
I
G2-S
gate 2-source current
-
10
mA
P
tot
total power dissipation
up to T
amb
= 60
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
200
0
100
200
MGE792
100
Tamb (
C)
Ptot
(mW)
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
10
0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
460
K/W
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V; T
amb
= 25
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
G1-SS
gate 1 cut-off current
V
G1-S
=
7 V; V
G2-S
= V
DS
= 0
-
25
nA
I
G2-SS
gate 2 cut-off current
V
G2-S
=
7 V; V
G1-S
= V
DS
= 0
-
25
nA
V
(BR)G1-SS
gate 1-source breakdown voltage
I
G1-SS
=
10 mA; V
G2-S
= V
DS
= 0
8
20
V
V
(BR)G2-SS
gate 2-source breakdown voltage
I
G2-SS
=
10 mA; V
G1-S
= V
DS
= 0
8
20
V
V
(P)G1-S
gate 1-source cut-off voltage
I
D
= 20
A; V
DS
= 10 V; V
G2-S
= 4 V
-
-
1.3
V
V
(P)G2-S
gate 2-source cut-off voltage
I
D
= 20
A; V
DS
= 10 V; V
G1-S
= 0
-
-
1.1
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
transfer admittance
f = 1 kHz
18
19
-
mS
C
ig1-s
input capacitance at gate 1
f = 1 MHz
-
2.6
3
pF
C
ig2-s
input capacitance at gate 2
f = 1 MHz
-
1.4
-
pF
C
rs
feedback capacitance
f = 1 MHz
-
25
-
fF
C
os
output capacitance
f = 1 MHz
-
1.2
-
pF
F
noise figure
f = 800 MHz; G
S
= 5 mS; B
S
= B
Sopt
-
2
3
dB
Y
fs
Fig.3 Output characteristics.
V
G2-S
= 4 V; T
amb
= 25
C.
handbook, halfpage
0
4
8
16
20
0
12
VDS (V)
10
ID
(mA)
MGD833
VG1
-
S
+
0.4 V
+
0.2 V
0 V
-
0.2 V
-
0.4 V
-
0.6 V
Fig.4 Transfer characteristics.
V
DS
= 10 V; V
G2-S
= 4 V; T
amb
= 25
C.
handbook, halfpage
-
1.5
1.0
24
ID
(mA)
0
8
16
-
1.0
-
0.5
0
0.5
VG1-S (V)
MGD832
max
typ
min
April 1991
5
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.5 SOT143.
Dimensions in mm.
See also
"Soldering recommendations".
handbook, full pagewidth
MBC845
10
max
o
10
max
o
30
max
o
1.1
max
0.75
0.60
0.150
0.090
0.1
max
4
3
2
M
0.1
A B
0
0.1
0.48
TOP VIEW
1.4
1.2
2.5
max
3.0
2.8
M
0.2
A B
A
B
1.9
1
0
0.1
0.88
1.7
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