DATA SHEET
Product specification
Supersedes data of 1996 Oct 08
File under Discrete Semiconductors, SC14
1997 Sep 10
DISCRETE SEMICONDUCTORS
BFC520
NPN wideband cascode transistor
1997 Sep 10
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
FEATURES
Small size
High power gain at low bias current and high
frequencies
High reverse isolation
Low noise figure
Gold metallization ensures excellent reliability
Minimum operating voltage V
C2
-
E1
= 1 V.
APPLICATIONS
Low noise, high gain amplifiers
Oscillator buffer amplifiers
Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and cordless phones and has
a very low feedback capacitance resulting in high isolation.
PINNING - SOT353
SYMBOL
PIN
DESCRIPTION
b
2
1
base 2
e
1
2
emitter 1
b
1
3
base 1
c
1
/e
2
4
collector 1/emitter 2
c
2
5
collector 2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
V
C2
-
E1
= 3 V; I
C
= 20 mA; V
B2
= 2.1 V; b
2
connected to ground via 1 nF (0603) capacitor, e
1
connected directly to
ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
re
feedback capacitance C
B1
-
C2
-
-
10
fF
maximum isolation
f = 900 MHz; T
amb
= 25
C
-
-
63
-
dB
f = 2 GHz; T
amb
= 25
C
-
-
38
-
dB
MSG
maximum stable power gain
(narrowband)
f = 900 MHz; T
amb
= 25
C
-
31
-
dB
f = 2 GHz; T
amb
= 25
C
-
19
-
dB
F
noise figure
I
C
= 5 mA; f = 900 MHz;
S
=
opt
-
1.3
1.6
dB
R
th j-s
thermal resistance from
junction to soldering point
single loaded
-
-
230
K/W
double loaded
-
-
115
K/W
s
21
s
12
/
2
1997 Sep 10
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
8
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
70
mA
P
tot
total power dissipation
up to T
s
= 60
C; note 1
-
1
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point; note 1
single loaded
230
K/W
double loaded
115
K/W
1997 Sep 10
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. MSG =
2. Maximum isolation is defined as the isolation when S
21
of the amplifier is reduced to unity (buffer application).
3. I
C
=5 mA; V
CE
= 3 V; R
S
= 50
; Z
L
= opt; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
-
q)
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
collector-base breakdown voltage
I
C
= 2.5
A; I
E
= 0
20
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 10
A; I
B
= 0
8
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 2.5
A; I
C
= 0
2.5
-
-
V
I
CBO
collector-base leakage current
I
E
= 0; V
CB
= 6 V
-
-
50
nA
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 6 V
60
120
250
AC characteristics of the cascode configuration
f
T
transition frequency
I
C
= 20 mA; V
C2-E1
= 3 V;
f = 1 GHz
-
7
-
GHz
C
c
collector capacitance T2
I
E
= i
e
= 0; V
C2-B2
= 1 V;
f = 1 MHz
-
0.55
-
pF
C
re2
feedback capacitance T2
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
-
500
-
fF
C
re
feedback capacitance
I
C
= 0; V
C2-E1
= 3 V; f = 1 MHz
-
-
10
fF
MSG
maximum stable power gain; note 1 I
C
= 20 mA; V
C2-E1
= 3 V;
f = 900 MHz; T
amb
= 25
C
-
31
-
dB
I
C
= 20 mA; V
C2-E1
= 3 V;
f = 2 GHz; T
amb
= 25
C
-
19
-
dB
insertion power gain
I
C
= 20 mA; V
C2-E1
= 3 V;
f = 900 MHz; T
amb
= 25
C
-
17
-
dB
I
C
= 20 mA; V
C2-E1
= 3 V;
f = 2 GHz; T
amb
= 25
C
-
13
-
dB
maximum isolation; note 2
f = 900 MHz
-
63
-
dB
f = 2 GHz
-
38
-
dB
F
noise figure
I
C
= 5 mA; V
C2-E1
= 3 V;
f = 900 MHz;
S
=
opt
-
1.3
1.6
dB
IP
3
third order intercept point (input)
note 3
-
-
18
-
dBm
s
21
2
s
21
s
12
/
2
s
12
s
21
/
k
k
2
1
k
1
s
11
s
22
s
12
s
21
2
s
11
2
s
22
2
+
2
s
12
s
21
-----------------------------------------------------------------------------------------------------------------
=
1997 Sep 10
5
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC520
Fig.2
Power derating as a function of soldering
point temperature; typical values.
handbook, halfpage
0
50
100
200
1
0
MBG228
150
1.5
0.5
Ptot
(mW)
Ts (
o
C)
double loaded
single loaded
Fig.3
Transition frequency as a function of
collector current; typical values.
f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
MBG219
12
4
8
0
1
10
fT
(GHz)
IC (mA)
10
2
VC2-E1 = 12 V
9 V
6 V
3 V
Fig.4
Minimum noise figure as a function of
frequency; typical values.
V
C2-E1
= 3 V.
handbook, halfpage
4
2
1
0
3
MGG219
10
-
1
f (GHz)
F
(dB)
1
10
IC = 2 mA
10 mA
Fig.5
Minimum noise figure as a function of
collector current; typical values.
V
C2-E1
= 3 V.
handbook, halfpage
2
1
0
3
MGG220
1
10
2
IC (mA)
F
(dB)
10
f = 900 MHz
500 MHz
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