DATA SHEET
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
DISCRETE SEMICONDUCTORS
BFE520
NPN wideband differential
transistor
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
FEATURES
Small size
High power gain at low bias current and voltage
Temperature matched
Balanced configuration
h
FE
matched
Continues to operate at V
CE
< 1 V.
APPLICATIONS
Single balanced mixers
Balanced amplifiers
Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
PINNING - SOT353B
PIN
SYMBOL
DESCRIPTION
b
1
1
base 1
e
2
emitter
b
2
3
base 2
c
2
4
collector 2
c
1
5
collector 1
handbook, halfpage
1
3
5
4
2
Top view
MAM211
c1
c2
e
b1
b2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
C
re
feedback capacitance C
BC
I
e
= 0; V
CB
= 3 V; f = 1 MHz
-
0.35
0.4
pF
MSG/G
max
maximum power gain
I
C
= 20 mA; V
CE
= 3 V; f = 900 MHz
-
16
-
dB
I
C
= 20 mA; V
CE
= 3 V; f = 2 GHz
-
9
-
dB
F
noise figure
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz;
S
=
opt
-
1.1
1.6
dB
I
C
= 5 mA; V
CE
= 3 V; f = 2 GHz;
S
=
opt
-
1.9
-
dB
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 3 V
60
120
250
R
th j-s
thermal resistance from
junction to soldering point
single loaded
-
-
230
K/W
double loaded
-
-
115
K/W
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
8
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
70
mA
P
tot
total power dissipation
up to T
s
= 118
C; note 1
-
1
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point; note 1
single loaded
230
K/W
double loaded
115
K/W
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
collector-base breakdown voltage
I
C
= 2.5
A; I
E
= 0
20
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 10
A; I
B
= 0
8
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 2.5
A; I
C
= 0
2.5
-
-
V
I
CBO
collector-base leakage current
I
E
= 0; V
CB
= 6 V
-
-
50
nA
h
FE
DC current gain
I
C
= 20 mA; V
CE
= 6 V
60
120
250
DC characteristics of the dual transistor
h
FE
ratio of highest and lowest DC
current gain
I
C1
= I
C2
= 20 mA;
V
CE1
= V
CE2
= 6 V
1
1.2
-
V
BEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
I
E1
= I
E2
= 30 mA; T
amb
= 25
C
0
1
-
mV
AC characteristics of any single transistor
f
T
transition frequency
I
C
= 20 mA; V
CE
= 3 V;
f = 1 GHz
-
9
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
-
0.4
0.45
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 3 V; f = 1 MHz
-
0.35
0.4
pF
MSG/G
max
maximum power gain; note 1
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
-
16
-
dB
I
C
= 20 mA; V
CE
= 3 V;
f = 2 GHz; T
amb
= 25
C
-
9
-
dB
insertion power gain
I
C
= 20 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
13
14
-
dB
F
noise figure
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
-
1.1
1.6
dB
I
C
= 5 mA; V
CE
= 3 V;
f = 2 GHz;
S
=
opt
-
1.9
-
dB
s
21
2
1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
Note
1. These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.016
fA
2
BF
220.1
-
3
NF
1.000
-
4
VAF
48.06
V
5
IKF
510.0
mA
6
ISE
283.0
fA
7
NE
2.035
-
8
BR
100.7
-
9
NR
0.988
-
10
VAR
1.692
V
11
IKR
2.352
mA
12
ISC
24.48
aA
13
NC
1.022
-
14
RB
10.00
15
IRB
1.000
A
16
RBM
10.00
17
RE
775.3
m
18
RC
2.210
19
(1)
XTB
0.000
-
20
(1)
EG
1.110
eV
21
(1)
XTI
3.000
-
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
-
25
TF
8.616
ps
26
XTF
6.788
-
27
VTF
1.414
V
28
ITF
110.3
mA
29
PTF
45.01
deg
30
CJC
447.6
fF
31
VJC
189.2
mV
32
MJC
0.071
-
33
XCJC
0.130
-
34
TR
543.7
ps
35
(1)
CJS
0.000
F
36
(1)
VJS
750.0
mV
37
(1)
MJS
0.000
-
38
FC
0.780
-
Fig.2
Package equivalent circuit SOT353B
(inductance only).
handbook, halfpage
B1
B2
C1
C2
LB
LB
MBG190
LP
LP
T1
T2
LE
E
LE
LP
Fig.3
Package capacitance (fF) between
indicated nodes.
35
E
B2
C2
C1
3.5
35
2
0.4
0.8
0.6
LP
Lead inductances (nH)
LB
LE
35
36
35
2
36
15
B1
E
B2
C2
MBG191
PDF 
ZIP