DATA SHEET
Product specification
File under discrete semiconductors, SC14
1995 Sep 13
DISCRETE SEMICONDUCTORS
BFG135
NPN 7GHz wideband transistor
1995 Sep 13
2
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
age
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
25
V
V
CEO
collector-emitter voltage
open base
-
-
15
V
I
C
DC collector current
-
-
150
mA
P
tot
total power dissipation
up to T
s
= 145
C (note 1)
-
-
1
W
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 10 V; T
j
= 25
C
80
130
-
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
-
7
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
C
-
16
-
dB
I
C
= 100 mA; V
CE
= 10 V; f = 800 MHz;
T
amb
= 25
C
-
12
-
dB
V
o
output voltage
d
im
=
-
60 dB; I
C
= 100 mA; V
CE
= 10 V;
R
L
= 75
; T
amb
= 25
C;
f
(p+q
-
r)
= 793.25 MHz
-
850
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
150
mA
P
tot
total power dissipation
up to T
s
= 145
C (note 1)
-
1
W
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. d
im
=
-
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 445.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 453.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 455.25 MHz;
measured at f
(p+q
-
r)
= 443.25 MHz.
2. d
im
=
-
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
-
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-s
thermal resistance from junction to soldering
point
up to T
s
= 145
C (note 1)
30 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 10 V
-
-
1
A
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 10 V
80
130
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
2
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
7
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 10 V; f = 1 MHz
-
1.2
-
pF
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
C
-
7
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
16
-
dB
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
-
12
-
dB
V
o
output voltage
note 1
-
900
-
mV
note 2
-
850
-
mV
d
2
second order intermodulation
distortion
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
C;
f
(p+q)
= 450 MHz;
f
p
= 50 MHz; f
q
= 400 MHz
-
-
58
-
dB
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
C;
f
(p+q)
= 810 MHz;
f
p
= 250 MHz; f
q
= 560 MHz
-
-
53
-
dB
1995 Sep 13
4
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
List of components (see test circuit)
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (
r
= 2.2); thickness
1
/
16
inch; thickness of copper sheet
1
/
32
inch.
DESIGNATION
DESCRIPTION
VALUE
UNIT
DIMENSIONS
CATALOGUE NO.
C1, C3, C5, C6
multilayer ceramic capacitor
10
nF
2222 590 08627
C2, C7
multilayer ceramic capacitor
1
pF
2222 851 12108
C4 (note 1)
miniature ceramic plate capacitor
10
nF
2222 629 08103
L1
microstripline
75
length 7 mm;
width 2.5 mm
L2
microstripline
75
length 22mm;
width 2.5 mm
L3 (note 1)
1.5 turns 0.4 mm copper wire
int. dia. 3 mm;
winding pitch 1 mm
L4
microstripline
75
length 19 mm;
width 2.5 mm
L5
Ferroxcube choke
5
H
3122 108 20153
L6 (note 1)
0.4 mm copper wire
25
nH
length 30 mm
R1
metal film resistor
10
k
2322 180 73103
R2 (note 1)
metal film resistor
200
2322 180 73201
R3, R4
metal film resistor
27
2322 180 73279
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
handbook, full pagewidth
MBB284
DUT
,,
,
VBB
C3
R1
L1
C1
C2
L2
input
75
R2
L6
R3
R4
L3
C4
C7
C5
C6
L5
output
75
VCC
L4
1995 Sep 13
5
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
Fig.3 Intermodulation distortion test printed-circuit board.
handbook, full pagewidth
MBB299
75
input
75
output
C6
C7
C5
L5
VCC
VBB
R1
C3
C1
C2
L1
L2
L4
R3
R2
R4
C4
L6
L3
andbook, full pagewidth
MBB298
80 mm
60 mm
handbook, full pagewidth
MBB297
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