DATA SHEET
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 12
DISCRETE SEMICONDUCTORS
BFG16A
NPN 2 GHz wideband transistor
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
FEATURES
High power gain
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
fpage
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
40
V
V
CEO
collector-emitter voltage
open base
-
-
25
V
I
C
DC collector current
-
-
150
mA
P
tot
total power dissipation
up to T
s
= 110
C; note 1
-
-
1
W
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 5 V; T
j
= 25
C
25
80
-
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
1.5
-
GHz
G
UM
maximum unilateral power gain
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
10
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CEO
collector-emitter voltage
open base
-
25
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
DC collector current
-
150
mA
P
tot
total power dissipation
up to T
s
= 110
C; note 1
-
1
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point
up to T
s
= 110
C; note 1
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
open emitter; I
C
= 0.1 mA
25
-
-
V
V
(BR)CEO
collector-emitter breakdown
voltage
open base; I
C
= 10 mA
18
-
-
V
V
(BR)EBO
emitter-base breakdown voltage open collector; I
E
= 0.1 mA
3
-
-
V
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 28 V
-
-
20
A
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 5 V
25
80
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
2.5
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
10.0
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 10 V; f = 1 MHz
-
1.5
-
pF
f
T
transition frequency
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
1.5
-
GHz
G
UM
maximum unilateral power gain
note 1
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
-
10
-
dB
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
0.8
0.6
0.2
0
0.4
MBG198
150
T ( C)
o
s
Ptot
(W)
1.0
1.2
Fig.3
DC current gain as function of
collector current.
V
CE
= 10 V; T
j
= 25
C.
handbook, halfpage
MBB365
0
160
120
40
0
100
200
I (mA)
C
FE
h
80
Fig.4
Feedback capacitance as function of
collector-base voltage.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
MBB363
0
5
0
12
4
8
V (V)
CB
C re
(pF)
4
3
2
1
16
20
Fig.5
Transition frequency as a function of
collector current.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
MBB364
0
40
80
160
2
1.6
0.8
0
1.2
120
I (mA)
C
(GHz)
T
f
0.4
1995 Sep 12
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
Fig.6 Common emitter input reflection coefficient (S
11
).
I
C
= 70 mA; V
CE
= 15 V; Z
o
= 50
.
handbook, full pagewidth
MBB366
10
25
50
100
250
10
25
50
100
250
0
+ j
j
3 GHz
40 MHz
25
50
100
250
10
Fig.7 Common emitter forward transmission coefficient (S
21
).
I
C
= 70 mA; V
CE
= 15 V.
handbook, full pagewidth
MBB367
180
0 o
30o
60o
90o
120o
150o
o
150o
120o
90o
60o
30o
40 MHz
40
20
50
30
10
3 GHz
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