Document Outline
- FEATURES
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- SPICE parameters for BFQ195 crystal
- List of components
- PACKAGE OUTLINES
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 13
DISCRETE SEMICONDUCTORS
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
1995 Sep 13
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
PINNING
PIN
DESCRIPTION
BFG197 (Fig.1) Code: V5
1
collector
2
base
3
emitter
4
emitter
BFG197/X (Fig.1) Code: V13
1
collector
2
emitter
3
base
4
emitter
BFG197A/XR (Fig.2) Code: V35
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
1
2
3
4
Fig.2 SOT143XR.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
Note
1. T
S
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CEO
collector-emitter voltage
open base
-
-
10
V
I
C
collector current
DC value
-
-
100
mA
P
tot
total power dissipation
up to T
s
= 75
C; note 1
-
-
350
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
-
0.85
-
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 4 V; f = 2 GHz
-
7.5
-
GHz
G
UM
maximum unilateral
power gain
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 1 GHz
-
16
-
dB
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. T
S
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
10
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current
DC value, continuous
-
100
mA
P
tot
total power dissipation
up to T
s
= 75
C; note 1
-
350
mW
T
stg
storage temperature range
-
65
+150
C
T
j
junction operating temperature
-
175
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
from junction to soldering point; note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
I
E
= 0; V
CB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 5 V
40
110
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
-
1.5
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
3.3
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
-
0.85
-
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 4 V; f = 2 GHz
-
7.5
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 1 GHz
-
16
-
dB
I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
s
=
opt
; I
C
= 50 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
-
2.3
-
dB
d
2
second order intermodulation
distortion
V
CE
= 6 V;V
o
= 50 dBmV;
-
-
51
-
dB
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
1995 Sep 13
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
800
600
200
0
400
MBC983 - 2
150
P
tot
(mW)
T
s
(
o
C)
Fig.4
DC current gain as a function of collector
current.
V
CE
= 5 V.
handbook, halfpage
0
160
120
80
40
40
120
MBB267
80
I (mA)
C
h FE
Fig.5
Feedback capacitance as a function of
collector-base voltage.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
1.2
0.8
0.4
0
2
10
MCD155
4
6
8
C re
(pF)
V (V)
CB
Fig.6
Transition frequency as a function of
collector current.
V
CE
= 4 V; T
amb
= 25
C; f = 2 GHz.
handbook, halfpage
0
20
40
80
8
6
2
0
4
MCD156
60
I (mA)
C
f T
(GHz)
1995 Sep 13
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG197; BFG197/X;
BFG197/XR
Fig.7 Gain as a function of collector current.
V
CE
= 4 V; f = 1 GHz.
handbook, halfpage
0
20
40
80
20
15
5
0
10
MCD157
60
I (mA)
C
(dB)
gain
MSG
GUM
Gmax
Fig.8 Gain as a function of frequency.
V
CE
= 4 V; I
C
= 50 mA.
handbook, halfpage
50
0
10
10
MCD158
10
2
10
3
10
4
20
30
40
f (MHz)
(dB)
gain
MSG
GUM
G max
Fig.9 Gain as a function of frequency.
V
CE
= 6 V; I
C
= 50 mA.
handbook, halfpage
0
10
MCD159
10
2
10
3
10
4
50
10
20
30
40
f (MHz)
gain
(dB)
MSG
GUM
G max
Fig.10 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 30 mA.
handbook, halfpage
50
0
10
10
MCD160
10
2
10
3
10
4
20
30
40
gain
(dB)
f (MHz)
GUM
G max
MSG
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