DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 12
DISCRETE SEMICONDUCTORS
BFG198
NPN 8 GHz wideband transistor
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
age
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CEO
collector-emitter voltage
open base
-
-
10
V
I
C
DC collector current
-
-
100
mA
P
tot
total power dissipation
up to T
s
= 135
C (note 1)
-
-
1
W
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 5 V; T
j
= 25
C
40
90
-
f
T
transition frequency
I
C
= 50 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
-
8
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 50 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
C
-
18
-
dB
I
C
= 50 mA; V
CE
= 8 V; f = 800 MHz;
T
amb
= 25
C
-
15
-
dB
V
o
output voltage
d
im
=
-
60 dB; I
C
= 70 mA; V
CE
= 8 V;
R
L
= 75
; T
amb
= 25
C;
f
(p+q
-
r)
= 793.25 MHz
-
700
-
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
10
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
100
mA
P
tot
total power dissipation
up to T
s
= 135
C (note 1)
-
1
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. d
im
=
-
60 dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB;
V
q
= V
o
-
6 dB; f
p
= 445.25 MHz;
V
r
= V
o
-
6 dB; f
q
= 453.25 MHz; f
r
= 455.25 MHz
measured at f
(p+q
-
r)
= 443.25 MHz.
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
-
r)
= 793.25 MHz.
4. I
C
= 50 mA; V
CE
= 8 V; V
o
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 135
C (note 1)
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 5 V
40
90
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
-
1.5
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
4
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 8 V; f = 1 MHz
-
0.8
-
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
-
8
-
GHz
G
UM
maximum unilateral power
gain; note 1
I
C
= 50 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
C
-
18
-
dB
I
C
= 50 mA; V
CE
= 8 V; f = 800 MHz;
T
amb
= 25
C
-
15
-
dB
V
o
output voltage
note 2
-
750
-
mV
note 3
-
700
-
mV
d
2
second order
intermodulation distortion
note 4
-
-
55
-
dB
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
List of components (see test circuit)
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (
r
= 2.2);
thickness
1
/
16
inch; thickness of copper sheet 2 x 35
m; see Fig.2.
DESIGNATION
DESCRIPTION
VALUE
UNIT
DIMENSIONS
CATALOGUE NO.
C2
multilayer ceramic capacitor
1.2
pF
2222 851 12128
C1, C4, C6, C7
multilayer ceramic capacitor
10
nF
2222 590 08627
C3
multilayer ceramic capacitor
10
nF
2222 851 12128
C5 (note 1)
multilayer ceramic capacitor
10
nF
2222 629 08103
C8
multilayer ceramic capacitor
1.5
pF
2222 851 12158
L1 (note 1)
1.5 turns 0.4 mm copper wire
int. dia. 3 mm;
winding pitch 1 mm
L2
microstripline
75
length 22 mm;
width 2.5 mm
L3 (note 1)
0.4 mm copper wire
24
nH
length 30 mm
L4 (note 1)
0.4 mm copper wire
3.6
nH
length 4 mm
L5
microstripline
75
length 19 mm;
width 2.5 mm
L6
Ferroxcube choke
5
H
3122 108 20153
R1
metal film resistor
10
2322 180 73103
R2 (note 1)
metal film resistor
220
2322 180 73221
R3, R4
metal film resistor
30
2322 180 73309
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
handbook, full pagewidth
MBB754
DUT
,
VBB
C3
R1
L1
C1
C2
L2
input
75
R2
L3
R3
R4
L5
C4
C5
C6
L4
output
75
VCC = 8 V
L6
1995 Sep 12
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board.
handbook, full pagewidth
MEA968
75
input
75
output
C7
C8
C6
L6
VCC
VBB
R1
C4
C2
C1
L2
L5
R3
R2
R4
C5
L3
L4
L1
C3
handbook, full pagewidth
MEA966
60 mm
80 mm
handbook, full pagewidth
MEA967
80 mm
60 mm
mounting
screws
M 2.5 (8x)
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