Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 29
DISCRETE SEMICONDUCTORS
BFG25A/X
NPN 5 GHz wideband transistor
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
FEATURES
Low current consumption
(100
A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143B.
Marking code: V11.
handbook, 2 columns
Top view
MSB014
1
2
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
-
-
8
V
V
CEO
collector-emitter voltage
-
-
5
V
I
C
collector current (DC)
-
-
6.5
mA
P
tot
total power dissipation
T
s
165
C
-
-
32
mW
h
FE
DC current gain
I
C
= 0.5 mA; V
CE
= 1 V
50
80
200
f
T
transition frequency
I
C
= 1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
C
3.5
5
-
GHz
G
UM
maximum unilateral power gain
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
C
-
18
-
dB
F
noise figure
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz;
=
opt
; T
amb
= 25
C
-
1.8
-
dB
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
=
opt
; T
amb
= 25
C
-
2
-
dB
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
8
V
V
CEO
collector-emitter voltage
open base
-
5
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
6.5
mA
P
tot
total power dissipation
T
s
165
C; note 1
-
32
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point note 1
320
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
I
E
= 0; V
CB
= 5 V
-
-
50
A
h
FE
DC current gain
I
C
= 0.5 mA; V
CE
= 1 V
50
80
200
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 1 V; f = 1 MHz
-
0.21
0.3
pF
f
T
transition frequency
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25
C; f = 500 MHz
3.5
5
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 0.5 mA; V
CE
= 1 V;
f = 1 GHz; T
amb
= 25
C
-
18
-
dB
F
noise figure
I
C
= 0.5 mA; V
CE
= 1 V; f = 1 GHz;
=
opt
; T
amb
= 25
C
-
1.8
-
dB
I
C
= 1 mA; V
CE
= 1 V; f = 1 GHz;
=
opt
; T
amb
= 25
C
-
2
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
-------------------------------------------------------------- dB
=
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
40
30
10
0
20
MRC038 - 1
150
Ptot
(mW)
Ts (
oC)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 1 V.
handbook, halfpage
10
0
MCD138
1
10
1
10
2
10
3
40
100
h FE
I (mA)
C
20
80
60
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
0.3
0.2
0.1
0
2
4
6
MCD139
C re
(pF)
V (V)
CB
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 1 V; f = 500 MHz; T
amb
= 25
C.
handbook, halfpage
0
6
4
2
0
1
2
4
MCD140
3
I (mA)
C
(GHz)
T
f
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
Fig.6
Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
30
20
10
0
MCD141
gain
(dB)
I (mA)
C
0
1.0
2.5
0.5
1.5
2.0
MSG
GUM
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
0
1.0
2.5
20
15
5
0
10
MCD142
0.5
1.5
2.0
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8
Gain as a function of frequency;
typical values.
I
C
= 0.5 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
50
MCD143
10
10
2
10
3
10
4
0
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Fig.9
Gain as a function of frequency;
typical values.
I
C
= 1 mA; V
CE
= 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
handbook, halfpage
50
MCD144
10
10
2
10
3
10
4
0
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
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