Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
DISCRETE SEMICONDUCTORS
BFG403W
NPN 17 GHz wideband transistor
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
FEATURES
Low current
Very high power gain
Low noise figure
High transition frequency
Very low feedback capacitance.
APPLICATIONS
Pager front ends
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P3.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
10
V
V
CEO
collector-emitter voltage
open base
-
-
4.5
V
I
C
collector current (DC)
-
3
3.6
mA
P
tot
total power dissipation
T
s
140
C
-
-
16
mW
h
FE
DC current gain
I
C
= 3 mA; V
CE
= 2 V; T
j
= 25
C
50
80
120
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz
-
20
-
fF
f
T
transition frequency
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
-
17
-
GHz
G
max
maximum power gain
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
-
22
-
dB
F
noise figure
I
C
= 1 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
-
1
-
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
10
V
V
CEO
collector-emitter voltage
open base
-
4.5
V
V
EBO
emitter-base voltage
open collector
-
1
V
I
C
collector current (DC)
-
3.6
mA
P
tot
total power dissipation
T
s
140
C; note 1; see Fig.2
-
16
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
820
K/W
Fig.2 Power derating curve.
handbook, halfpage
0
40
80
120
160
MGD957
20
0
10
Ts (
C)
Ptot
(mW)
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 2.5
A; I
E
= 0
10
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0
4.5
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 2.5
A; I
C
= 0
1
-
-
V
I
CBO
collector-base leakage current
I
E
= 0; V
CB
= 4.5 V
-
-
15
nA
h
FE
DC current gain
I
C
= 3 mA; V
CE
= 2 V; see Fig.3
50
80
120
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
-
170
-
fF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
315
-
fF
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
-
20
-
fF
f
T
transition frequency
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.5
-
17
-
GHz
G
max
maximum power gain; note 1
I
C
= 0.5 mA; V
CE
= 1 V; f = 900 MHz;
T
amb
= 25
C; see Figs 6 and 8
-
20
-
dB
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Figs 7 and 8
-
22
-
dB
insertion power gain
I
C
= 0.5 mA; V
CE
= 1 V; f = 900 MHz;
T
amb
= 25
C; see Fig.8
-
5
-
dB
I
C
= 3 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.8
-
14
-
dB
F
noise figure
I
C
= 1 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
-
1
-
dB
I
C
= 1 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
; see Fig.13
-
1.6
-
dB
P
L1
output power at 1 dB gain
compression
I
C
= 1 mA; V
CE
= 1 V; f = 900 MHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
-
5
-
dBm
ITO
third order intercept point
I
C
= 1 mA; V
CE
= 1 V; f = 900 MHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
6
-
dBm
S
21
2
1998 Mar 11
5
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
Fig.3
DC current gain as a function of collector
current; typical values.
(1) V
CE
= 3 V.
(2) V
CE
= 2 V.
(3) V
CE
= 1 V.
handbook, halfpage
0
2
4
6
MGG678
120
0
40
80
IC (mA)
hFE
(1)
(2)
(3)
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
1
5
50
30
10
0
20
40
2
3
4
MGG679
VCB (V)
Cre
(fF)
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C.
handbook, halfpage
20
0
4
8
12
16
MGG680
10
1
fT
(GHz)
IC (mA)
V
CE
= 2 V; f = 900 MHz.
Fig.6
Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
0
2
4
6
MGG709
30
10
0
20
IC (mA)
MSG
(dB)
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