Product specification
Supersedes data of 1997 Oct 28
File under Discrete Semiconductors, SC14
1998 Mar 11
DISCRETE SEMICONDUCTORS
BFG425W
NPN 25 GHz wideband transistor
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P5.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
10
V
V
CEO
collector-emitter voltage open base
-
-
4.5
V
I
C
collector current (DC)
-
25
30
mA
P
tot
total power dissipation
T
s
103
C
-
-
135
mW
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 2 V; T
j
= 25
C
50
80
120
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz
-
95
-
fF
f
T
transition frequency
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
-
25
-
GHz
G
max
maximum power gain
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
-
20
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
-
1.2
-
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
10
V
V
CEO
collector-emitter voltage
open base
-
4.5
V
V
EBO
emitter-base voltage
open collector
-
1
V
I
C
collector current (DC)
-
30
mA
P
tot
total power dissipation
T
s
103
C; note 1; see Fig.2
-
135
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
40
160
200
150
50
0
100
80
120
MGG681
Ts (
C)
Ptot
(mW)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
350
K/W
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 2.5
A; I
E
= 0
10
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage
I
C
= 1 mA; I
B
= 0
4.5
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 2.5
A; I
C
= 0
1
-
-
V
I
CBO
collector-base leakage current
I
E
= 0; V
CB
= 4.5 V
-
-
15
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 2 V; see Fig.3
50
80
120
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
-
300
-
fF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
575
-
fF
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
-
95
-
fF
f
T
transition frequency
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.5
-
25
-
GHz
G
max
maximum power gain; note 1
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Figs 7 and 8
-
20
-
dB
insertion power gain
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.8
-
17
-
dB
F
noise figure
I
C
= 2 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
-
0.8
-
dB
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
; see Fig.13
-
1.2
-
dB
P
L1
output power at 1 dB gain
compression
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
12
-
dBm
ITO
third order intercept point
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
22
-
dBm
S
21
2
1998 Mar 11
5
Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
Fig.3
DC current gain as a function of collector
current; typical values.
(1) V
CE
= 3 V.
(2) V
CE
= 2 V.
(3) V
CE
= 1 V.
handbook, halfpage
0
10
20
40
30
MGG682
120
0
40
80
IC (mA)
hFE
(3)
(2)
(1)
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
1
5
200
120
40
0
80
160
2
3
4
MGG683
VCB (V)
Cre
(fF)
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C.
handbook, halfpage
25
0
5
10
15
20
MGG684
1
10
10
2
fT
(GHz)
IC (mA)
V
CE
= 2 V; f = 900 MHz.
Fig.6
Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
0
10
20
40
30
MGG685
30
0
10
20
IC (mA)
MSG
(dB)
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