Product specification
Supersedes data of 1998 Jul 09
1998 Oct 21
DISCRETE SEMICONDUCTORS
BFG480W
NPN wideband transistor
M3D124
1998 Oct 21
2
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
FEATURES
High power gain
High efficiency
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
Linear and non-linear operation.
APPLICATIONS
RF front end with high linearity system demands
(CDMA)
Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P6.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage open base
-
4.5
V
I
C
collector current (DC)
80
250
mA
P
tot
total power dissipation
T
s
60
C
-
360
mW
f
T
transition frequency
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
21
-
GHz
G
max
maximum gain
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
16
-
dB
F
noise figure
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
1.8
-
dB
G
p
power gain
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
13.5
-
dB
C
collector efficiency
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
45
-
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Oct 21
3
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
14.5
V
V
CEO
collector-emitter voltage
open base
-
4.5
V
V
EBO
emitter-base voltage
open collector
-
1
V
I
C
collector current (DC)
-
250
mA
P
tot
total power dissipation
T
s
60
C; note 1; see Fig.2
-
360
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
40
80
160
500
0
400
MGR623
Ts (
C)
Ptot
(mW)
120
300
200
100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
250
K/W
1998 Oct 21
4
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 50
A; I
E
= 0
14.5
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage
I
C
= 5 mA; I
B
= 0
4.5
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 100
A; I
C
= 0
1
-
-
V
I
CBO
collector-base leakage current
V
CE
= 5 V; V
BE
= 0
-
-
70
nA
h
FE
DC current gain
I
C
= 80 mA; V
CE
= 2 V; see Fig.3
40
60
100
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
-
1.4
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
2.2
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
-
340
-
fF
f
T
transition frequency
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.5
-
21
-
GHz
G
max
maximum power gain; note 1
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Figs 7 and 8
-
16
-
dB
insertion power gain
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C; see Fig.8
-
12
-
dB
F
noise figure
I
C
= 8 mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
-
1.2
-
dB
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
; see Fig.13
-
1.8
-
dB
P
L1
output power at 1 dB gain
compression
Class-AB;
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; I
CQ
= 1 mA; f = 2 GHz
-
20
-
dBm
ITO
third order intercept point
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
-
28
-
dBm
S
21
2
1998 Oct 21
5
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 2 V.
handbook, halfpage
0
50
100
150
100
0
80
MGR624
IC (mA)
hFE
60
40
20
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
800
400
600
200
0
1
5
MGR625
2
3
4
VCB (V)
Cre
(fF)
Fig.5
Transition frequency as a function of
collector current; typical values.
f = 2 GHz; V
CE
= 2 V; T
amb
= 25
C.
handbook, halfpage
30
20
10
0
MGR626
10
10
2
10
3
IC (mA)
fT
(GHz)
f = 900 MHz; V
CE
= 2 V.
Fig.6
Gain as a function of collector current;
typical values.
handbook, halfpage
0
40
80
160
30
10
0
20
MGR627
120
IC (mA)
gain
(dB)
MSG
S21
Gmax
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