Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1995
1998 Oct 02
DISCRETE SEMICONDUCTORS
BFG505; BFG505/X
NPN 9 GHz wideband transistors
book, halfpage
M3D071
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
CODE
BFG505
N33
BFG505/X
N39
PINNING
PIN
DESCRIPTION
BFG505
BFG505/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CES
collector-emitter voltage R
BE
= 0
-
-
15
V
I
C
collector current (DC)
-
-
18
mA
P
tot
total power dissipation
T
s
130
C
-
-
150
mW
h
FE
DC current gain
V
CE
= 6 V; I
C
= 5 mA
60
120
250
C
re
feedback capacitance
V
CB
= 6 V; I
C
= i
c
= 0; f = 1 MHz
-
0.2
-
pF
f
T
transition frequency
V
CE
= 6 V; I
C
= 5 mA; f = 1 GHz
-
9
-
GHz
G
UM
maximum unilateral
power gain
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
C; f = 900 MHz
-
20
-
dB
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
C; f = 2 GHz
-
13
-
dB
S
21
2
insertion power gain
V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
C; f = 900 MHz
16
17
-
dB
F
noise figure
s
=
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
C; f = 900 MHz
-
1.2
1.7
dB
s
=
opt
; V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
C; f = 900 MHz
-
1.6
2.1
dB
s
=
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
C; f = 2 GHz
-
1.9
-
dB
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CES
collector-emitter voltage
R
BE
= 0
-
15
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
18
mA
P
tot
total power dissipation
T
s
130
C; see Fig.2; note 1
-
150
mW
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
175
C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
200
150
50
0
100
150
MRA638-1
Ptot
(mW)
Ts (
C)
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. V
CE
= 6 V; I
C
= 5 mA; R
L
= 50
; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at 2f
p
-
f
q
= 898 MHz and 2f
q
-
f
p
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 6 V; I
E
= 0
-
-
50
nA
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 6 V; see Fig.3
60
120
250
C
e
emitter capacitance
I
C
= i
c
= 0 V
EB
= 0.5 V; f = 1 MHz
-
0.4
-
pF
C
c
collector capacitance
V
CB
= 6 V; I
E
= i
e
= 0; f = 1 MHz
-
0.3
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 6 V; f = 1 MHz; see Fig.4
-
0.2
-
pF
f
T
transition frequency
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
see Fig.5
-
9
-
GHz
G
UM
maximum unilateral
power gain; note 1
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
-
20
-
dB
I
c
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
-
13
-
dB
S
21
2
insertion power gain
I
c
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
16
17
-
dB
F
noise figure
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
-
1.2
1.7
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
-
1.6
2.1
dB
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
-
1.9
-
dB
P
L1
output power at 1 dB gain
compression
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
;
T
amb
= 25
C; f = 900 MHz
-
4
-
dBm
ITO
third order intercept point
note 2
-
10
-
dBm
G
UM
10
S
21
2
1
S
11
2
(
)
1
S
22
2
(
)
--------------------------------------------------------------
dB.
log
=
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
Fig.3
DC current gain as a function of collector
current.
V
CE
= 6 V.
handbook, halfpage
0
250
50
100
150
hFE
200
MRA639
10
-
3
10
-
2
10
-
1
1
10
IC (mA)
10
2
Fig.4
Feedback capacitance as a function of
collector-base voltage.
I
C
= 0; f = 1 MHz.
handbook, halfpage
0
2
10
0.4
0.3
0.1
0
0.2
Cre
(pF)
4
6
8
VCB (V)
MRA640
Fig.5
Transition frequency as a function of
collector current.
T
amb
= 25
C; f = 1 GHz.
handbook, halfpage
12
0
4
8
fT
(GHz)
IC (mA)
MRA641
10
-
1
1
10
10
2
VCE = 6 V
VCE = 3 V
Fig.6 Gain as a function of collector current.
handbook, halfpage
0
4
IC (mA)
8
12
25
0
20
MSG
GUM
15
gain
(dB)
10
5
MRA642
V
CE
= 6 V; f = 900 MHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
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