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Электронный компонент: BFG541

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFG541
NPN 9 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
page
4
1
2
3
MSB002 - 1
Top view
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CES
collector-emitter voltage
R
BE
= 0
-
-
15
V
I
C
DC collector current
-
-
120
mA
P
tot
total power dissipation
up to T
s
= 140
C; note 1
-
-
650
mW
h
FE
DC current gain
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
C
60
120
250
C
re
feedback capacitance
I
C
= 0; V
CB
= 8 V; f = 1 MHz
-
0.7
-
pF
f
T
transition frequency
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral power gain
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
-
15
-
dB
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
-
9
-
dB
S
21
2
insertion power gain
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
13
14
-
dB
F
noise figure
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
-
1.3
1.8
dB
P
L1
output power at 1 dB gain
compression
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
-
21
-
dBm
ITO
third order intercept point
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
-
34
-
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CES
collector-emitter voltage
R
BE
= 0
-
15
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
120
mA
P
tot
total power dissipation
up to T
s
= 140
C; note 1
-
650
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 140
C; note 1
55 K/W
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p
-
q)
= 898 MHz and at f
(2p
-
q)
= 904 MHz.
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; Z
L
= Z
s
= 75
; T
amb
= 25
C;
V
p
= V
o
; V
q
= V
o
-
6 dB; V
r
= V
o
-
6 dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(p
+
q
-
r)
= 793.25 MHz
4. I
C
= 40 mA; V
CE
= 8 V; V
o
= 325 mV; T
amb
= 25
C;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
(p
+
q)
= 810 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 8 V
-
-
50
nA
h
FE
DC current gain
I
C
= 40 mA; V
CE
= 8 V
60
120
250
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
2
-
pF
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
-
1
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 8 V; f = 1 MHz
-
0.7
-
pF
f
T
transition frequency
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
-
9
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
-
15
-
dB
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
-
9
-
dB
S
21
2
insertion power gain
I
c
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
13
14
-
dB
F
noise figure
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
-
1.3
1.8
dB
s
=
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
C
-
1.9
2.4
dB
s
=
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
C
-
2.1
-
dB
P
L1
output power at 1 dB gain
compression
I
c
= 40 mA; V
CE
= 8 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
-
21
-
dBm
ITO
third order intercept point
note 2
-
34
-
dBm
V
o
output voltage
note 3
-
500
-
mV
d
2
second order intermodulation
distortion
note 4
-
-
50
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB.
=
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG541
Fig.2 Power derating curve.
V
CE
10 V.
handbook, halfpage
0
50
100
200
1000
800
200
0
600
400
MRA654 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.3
DC current gain as a function of collector
current.
V
CE
= 8 V; T
j
= 25
C.
handbook, halfpage
MRA655
250
200
hFE
10
-
2
10
-
1
1
10
IC (mA)
10
2
150
100
50
0
Fig.4
Feedback capacitance as a function of
collector-base voltage.
I
C
= 0; f = 1 MHz.
handbook, halfpage
MRA656
1.0
0.8
Cre
(pF)
0
4
8
12
VCB (V)
0.6
0.4
0.2
0
Fig.5
Transition frequency as a function of
collector current.
f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
MRA657
12
8
fT
(GHz)
10
-
1
1
10
IC (mA)
VCE = 8 V
4 V
10
2
4
0