DATA SHEET
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 04
DISCRETE SEMICONDUCTORS
BFG591
NPN 7 GHz wideband transistor
1995 Sep 04
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
fpage
4
1
2
3
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
20
V
V
CEO
collector-emitter voltage
open base
-
-
15
V
I
C
collector current (DC)
-
-
200
mA
P
tot
total power dissipation
up to T
s
= 80
C; note 1
-
-
2
W
h
FE
DC current gain
I
C
= 70 mA; V
CE
= 8 V
60
90
250
C
re
feedback capacitance
I
C
= I
c
= 0; V
CE
= 12 V; f = 1 MHz
-
0.7
-
pF
f
T
transition frequency
I
C
= 70 mA; V
CE
= 12 V; f = 1 GHz
-
7
-
GHz
G
UM
maximum unilateral
power gain
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
C
-
13
-
dB
insertion power gain
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
C
-
12
-
dB
s
21
2
1995 Sep 04
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
-
200
mA
P
tot
total power dissipation
up to T
s
= 80
C; note 1
-
2
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
note 1
35
K/W
1995 Sep 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
CHARACTERISTICS
T
j
= 25
C (unless otherwise specified).
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
2. d
im
= 60 dB (DIN45004B);
V
p
= V
o;
V
q
= V
o
-
6 dB; V
r
= V
o
-
6 dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 803.25 MHz; measured at f
(p+q-r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 0.1 mA; I
E
= 0
-
-
20
V
V
(BR)CES
collector-emitter breakdown voltage
I
C
= 10 mA; I
B
= 0
-
-
15
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 0.1 mA; I
C
= 0
-
-
3
V
I
CBO
collector-base leakage current
I
E
= 0; V
CB
= 10 V
-
-
100
nA
h
FE
DC current gain
I
C
= 70 mA; V
CE
= 8 V
60
90
250
C
re
feedback capacitance
I
B
= I
b
= 0; V
CE
= 12 V;
f = 1 MHz
-
0.7
-
pF
f
T
transition frequency
I
C
= 70 mA; V
CE
= 12 V;
f = 1 GHz
-
7
-
GHz
G
UM
maximum unilateral power gain;
note 1
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
C
-
13
-
dB
I
C
= 70 mA; V
CE
= 12 V;
f = 2 GHz; T
amb
= 25
C
-
7.5
-
dB
insertion power gain
I
C
= 70 mA; V
CE
= 12 V;
f = 1 GHz; T
amb
= 25
C
-
12
-
dB
V
o
output voltage
note 2
-
700
-
mV
s
21
2
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
1995 Sep 04
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
Fig.2 Power derating curve.
0
50
100
200
2.0
0
MGC791
150
2.5
3.0
0.5
1.0
1.5
Ptot
(W)
Ts (
o
C)
V
CE
= 12 V.
Fig.3
DC current gain as a function of collector
current, typical values.
handbook, halfpage
MRA749
10
1
250
0
50
100
150
200
h FE
I (mA)
C
10
2
10
1
10
2
I
C
= 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage, typical values.
handbook, halfpage
0
1.2
0.8
0.4
0
4
16
MGC792
8
C re
(pF)
V
CB
(V)
12
Fig.5
Transition frequency as a function of
collector current, typical values.
f = 1 GHz; V
CE
= 12 V.
handbook, halfpage
8
(GHz)
f
T
4
2
0
10
2
MGC793
10
I
C
(mA)
1
6
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