Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- BFG67/X
- Noise Parameters
- BFG67/X
- Noise Parameters
- BFG67/X
- Noise Parameters
- Average Gain Parameters
- PACKAGE OUTLINES
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1995
1998 Oct 02
DISCRETE SEMICONDUCTORS
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3
BFG67/X (Fig.1)
V12
BFG67/XR (Fig.2)
V26
PINNING
PIN
DESCRIPTION
BFG67
BFG67/X
BFG67/XR
1
collector
collector
collector
2
base
emitter
emitter
3
emitter
base
base
4
emitter
emitter
emitter
Fig.1
Simplified outline
SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
4
Fig.2
Simplified outline
SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
10
V
I
C
collector current (DC)
-
50
mA
P
tot
total power dissipation
T
s
65
C
-
300
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
0.5
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
8
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
17
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
1.3
-
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
2.2
-
dB
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
10
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
collector current (DC)
-
50
mA
P
tot
total power dissipation
T
s
65
C; see Fig.3; note 1
-
380
mW
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
175
C
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBC984 - 1
150
P
tot
(mW)
T
s
(
o
C)
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
V
CB
= 5 V; I
E
= 0
-
-
50
nA
h
FE
DC current gain
I
C
= 15 mA; V
CE
= 5 V
60
100
-
f
T
transition frequency
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
-
8
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
-
0.7
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
1.3
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
-
0.5
-
pF
G
UM
maximum unilateral power
gain; note 1
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
17
-
dB
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V
T
amb
= 25
C; f = 1 GHz
-
1.3
-
dB
s
=
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
S
= 60
-
2.5
-
dB
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz; Z
S
= 60
-
3
-
dB
G
UM
10
S
21
2
1
S
11
2
(
)
1
S
22
2
(
)
-------------------------------------------------------------- dB.
log
=
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.4
DC current gain as a function of collector
current.
V
CE
= 5 V.
handbook, halfpage
0
120
80
40
0
20
40
MBB301
60
I (mA)
C
FE
h
Fig.5
Feedback capacitance as a function of
collector-base voltage.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
0.8
0.6
0.4
0.2
4
MBB302
8
12
16
Cre
(pF)
VCB (V)
0
Fig.6
Transition frequency as a function of
collector current.
V
CE
= 8 V; T
amb
= 25
; f = 2 GHz.
handbook, halfpage
0
10
20
40
8
6
2
0
4
MBB303
30
I (mA)
C
(GHz)
T
f
10
Fig.7 Gain as a function of collector current.
V
CE
= 8 V; f = 1 GHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
IC (mA)
0
20
15
10
0
10
20
40
MBB304
30
25
5
MSG
G UM
max
G
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