Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- SPICE parameters for BFR90A/X die
- List of components
- PACKAGE OUTLINES
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of 1995 Sep 12
1998 Sep 23
BFG92A/X
NPN 5 GHz wideband transistor
book, halfpage
M3D071
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143B.
Marking code: V14.
handbook, 2 columns
Top view
MSB014
1
2
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
-
-
20
V
V
CEO
collector-emitter voltage
-
-
15
V
I
C
collector current (DC)
-
-
25
mA
P
tot
total power dissipation
T
s
60
C
-
-
400
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 10 V; f = 1 MHz
-
0.35
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
3.5
5
-
GHz
G
UM
maximum unilateral power
gain
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
C;
f = 1 GHz
-
16
-
dB
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
C;
f = 2 GHz
-
11
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
C; f = 1 GHz
-
2
-
dB
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
25
mA
P
tot
total power dissipation
T
s
60
C; note 1
-
400
mW
T
stg
storage temperature range
-
65
150
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
I
E
= 0; V
CB
= 10 V
-
-
50
nA
h
FE
DC current gain
I
C
= 15 mA; V
CE
= 10 V
40
90
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
0.6
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
-
0.9
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 10 V; f = 1 MHz
-
0.35
-
pF
f
T
transition frequency
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
3.5
5
-
GHz
G
UM
maximum unilateral power
gain; note 1
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
C; f = 1 GHz
-
16
-
dB
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
C; f = 2 GHz
-
11
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
C; f = 1 GHz
-
2
-
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
C; f = 2 GHz
-
3
-
dB
G
UM
10
S
21
2
1
S
11
2
(
)
1
S
22
2
(
)
-------------------------------------------------------------- dB.
log
=
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
800
600
200
0
400
MBB963 - 1
150
P
tot
(mW)
T
s
(
o
C)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 10 V.
handbook, halfpage
0
10
20
30
120
0
40
80
MCD074
h FE
I (mA)
C
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
0.6
0.4
0.2
0
6
24
MCD075
12
C re
(pF)
V (V)
CB
18
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 10 V; T
amb
= 25
C; f = 500 MHz.
handbook, halfpage
0
10
20
30
6
0
2
4
MBB275
I (mA)
C
f T
(GHz)
1998 Sep 23
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
Fig.6
Gain as a function of collector current;
typical values.
V
CE
= 10 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
0
25
MCD077
5
10
15
20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 10 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
0
25
MCD078
5
10
15
20
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8
Gain as a function of frequency; typical
values.
V
CE
= 10 V; I
C
= 5 mA.
handbook, halfpage
50
0
10
MCD079
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f
(MHz)
MSG
G UM
G max
Fig.9
Gain as a function of frequency; typical
values.
V
CE
= 10 V; I
C
= 15 mA.
handbook, halfpage
50
0
10
MCD080
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
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