Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- MARKING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- SPICE parameters for BFR91A(/X) die
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of 1995 Sep 25
1998 Sep 23
BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
book, halfpage
M3D071
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
PINNING
PIN
DESCRIPTION
BFG93A
1
collector
2
base
3
emitter
4
emitter
BFG93A/X
1
collector
2
emitter
3
base
4
emitter
MARKING
TYPE NUMBER
CODE
BFG93A
R8
BFG93A/X
V15
Fig.1 SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
15
V
V
CEO
collector-emitter voltage
open base
-
-
12
V
I
C
collector current (DC)
-
-
35
mA
P
tot
total power dissipation
T
s
85
C
-
-
300
mW
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
-
0.6
-
pF
f
T
transition frequency
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
4.5
6
-
GHz
G
UM
maximum unilateral
power gain
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
C;
f = 1 GHz
-
16
-
dB
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
C;
f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
15
V
V
CEO
collector-emitter voltage
open base
-
12
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
35
mA
P
tot
total power dissipation
T
s
85
C; note 1
-
300
mW
T
stg
storage temperature range
-
65
+150
C
T
j
junction operating temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector leakage current
I
E
= 0; V
CB
= 5 V
-
-
50
nA
h
FE
DC current gain
I
C
= 30 mA; V
CE
= 5 V
40
90
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
-
0.9
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 5 V; f = 1 MHz
-
1.9
-
pF
C
re
feedback capacitance
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
-
0.6
-
pF
f
T
transition frequency
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
4.5
6
-
GHz
G
UM
maximum unilateral power
gain; note 1
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
C;
f = 1 GHz
-
16
-
dB
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
C;
f = 2 GHz
-
10
-
dB
F
noise figure
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 1 GHz
-
1.7
-
dB
s
=
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 2 GHz
-
2.3
-
dB
G
UM
10
S
21
2
1
S
11
2
(
)
1
S
22
2
(
)
-------------------------------------------------------------- dB.
log
=
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBG245
150
P
tot
(mW)
T
s
(
o
C)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 5 V.
handbook, halfpage
0
10
20
30
120
0
40
80
MCD087
h FE
I (mA)
C
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
= i
c
= 0; f = 1 MHz.
handbook, halfpage
0
4
8
16
1.0
0
MCD088
12
0.8
0.6
0.4
0.2
C re
(pF)
V (V)
CB
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 5 V; T
amb
= 25
C; f = 500 MHz.
handbook, halfpage
0
10
20
40
8
6
2
0
4
MCD089
30
I (mA)
C
(GHz)
T
f
1998 Sep 23
5
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
Fig.6
Gain as a function of collector current;
typical values.
V
CE
= 8 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
0
10
20
40
MCD090
30
gain
(dB)
I (mA)
C
MSG
G UM
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 8 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
0
10
20
40
MCD091
30
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8
Gain as a function of frequency; typical
values.
V
CE
= 8 V; I
C
= 10 mA.
handbook, halfpage
50
0
10
MCD092
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f
(MHz)
MSG
GUM
G max
Fig.9
Gain as a function of frequency; typical
values.
V
CE
= 8 V; I
C
= 30 mA.
handbook, halfpage
50
0
10
MCD093
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
G max
PDF 
ZIP