DATA SHEET
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
DISCRETE SEMICONDUCTORS
BFM505
Dual NPN wideband transistor
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
FEATURES
Small size
Temperature and h
FE
matched
Low noise and high gain
High gain at low current and low capacitance at low
voltage
Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixer.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN
SYMBOL
DESCRIPTION
1
b
1
base 1
2
e
1
emitter 1
3
c
2
collector 2
4
b
2
base 2
5
e
2
emitter 2
6
c
1
collector 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM210
1
3
6
4
2
Top view
c1
c2
e1
e2
b1
b2
5
Marking code: N0.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
C
re
feedback capacitance
I
e
= 0; V
CB
= 3 V; f = 1 MHz
-
0.22
-
pF
f
T
transition frequency
I
C
= 5 mA; V
CE
= 3V; f = 1 GHz
-
9
-
GHz
insertion power gain
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz;
T
amb
= 25
C
14
15
-
dB
G
UM
maximum unilateral power gain
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz;
T
amb
= 25
C
-
17
-
dB
F
noise figure
I
C
= 1 mA; V
CE
= 3 V; f = 900 MHz;
S
=
opt
-
1.1
1.6
dB
R
th j-s
thermal resistance from junction
to soldering point
single loaded
-
-
230
K/W
double loaded
-
-
115
K/W
s
21
2
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
V
CBO
collector-base voltage
open emitter
-
20
V
V
CEO
collector-emitter voltage
open base
-
8
V
V
EBO
emitter-base voltage
open collector
-
2.5
V
I
C
DC collector current
-
18
mA
P
tot
total power dissipation
up to T
s
= 118
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point; note 1
single loaded
230
K/W
double loaded
115
K/W
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V
(BR)CBO
collector-base breakdown voltage
I
C
= 2.5
A; I
E
= 0
20
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 10
A; I
B
= 0
8
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 2.5
A; I
C
= 0
2.5
-
-
V
I
CBO
collector-base leakage current
V
CB
= 6 V; I
E
= 0
-
-
50
nA
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 6 V
60
120
250
DC characteristics of the dual transistor
h
FE
ratio of highest and lowest DC
current gain
I
C1
= I
C2
= 5 mA;
V
CE1
= V
CE2
= 6 V
1
1.2
-
V
BEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
I
E1
= I
E2
= 10 mA; T
amb
= 25
C
0
1
-
mV
AC characteristics of any single transistor
f
T
transition frequency
I
C
= 5 mA; V
CE
= 3 V; f = 1 GHz
-
9
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
-
0.31
-
pF
C
re
feedback capacitance
I
C
= 0; V
CB
= 3 V; f = 1 MHz
-
0.22
-
pF
G
UM
maximum unilateral power gain;
note 1
I
C
= 5 mA; V
CE
= 3 V;
T
amb
= 25
C; f = 900 MHz
-
17
-
dB
I
C
= 5 mA; V
CE
= 3 V;
T
amb
= 25
C; f = 2 GHz
-
10
-
dB
insertion power gain
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
C
14
15
-
dB
F
noise figure
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
-
1.4
1.8
dB
I
C
= 5 mA; V
CE
= 3 V;
f = 2 GHz;
S
=
opt
-
1.9
-
dB
I
C
= 1 mA; V
CE
= 3 V;
f = 900 MHz;
S
=
opt
-
1.1
1.6
dB
s
21
2
G
UM
10
s
21
2
1
s
11
2
(
)
1
s
22
2
(
)
------------------------------------------------------------ dB
log
=
1996 Oct 08
5
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
Fig.2
Power derating as a function of soldering
point temperature; typical values.
handbook, halfpage
0
50
100
200
400
0
MBG208
150
600
200
Ptot
(mW)
Ts (
o
C)
double loaded
single loaded
Fig.3
Transition frequency as a function of
collector current; typical values.
f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
10
-
1
10
1
12
4
8
0
fT
(GHz)
IC (mA)
MGD687
VCE = 6V
3 V
Fig.4
DC current gain as a function of collector
current; typical values.
V
CE
= 6 V.
handbook, halfpage
MRA719
0
250
50
100
150
200
hFE
IC (mA)
10
-
2
10
-
1
10
-
3
1
10
10
2
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
= 0; f = 1 MHz.
handbook, halfpage
0
2
10
0.4
Cre
(pF)
0.3
0.1
0
0.2
4
6
8
VCB (V)
MRA720
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