DATA SHEET
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Nov 07
DISCRETE SEMICONDUCTORS
BFQ135
NPN 6.5 GHz wideband transistor
1997 Nov 07
2
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
FEATURES
Optimum temperature profile and
excellent reliability properties
ensured by emitter-ballasting
resistors and application of gold
sandwich metallization.
APPLICATIONS
MATV and microwave amplifiers,
such as in aerial amplifiers, radar
systems, oscilloscopes, spectrum
analysers, etc.
DESCRIPTION
NPN wideband transistor in a 4-lead
dual-emitter SOT172A2 package with
a ceramic cap. All leads are isolated
from the mounting base.
PINNING
PIN
DESCRIPTION
1
collector
2, 4
emitter
3
base
Fig.1 SOT172A2.
fpage
MSA457
4
2
1
3
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEO
collector-emitter voltage
open base
-
-
19
V
I
C
collector current (DC)
-
-
150
mA
P
tot
total power dissipation
T
c
145
C
-
-
2.7
W
h
FE
DC current gain
I
C
= 120 mA; V
CE
= 18 V; T
amb
= 25
C
55
-
-
f
T
transition frequency
I
C
= 120 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
C
-
6.5
-
GHz
G
UM
maximum unilateral power gain I
C
= 120 mA ; V
CE
= 18 V; f = 500 MHz;
T
amb
= 25
C
-
17
-
dB
I
C
= 120 mA; V
CE
= 18 V; f = 800 MHz;
T
amb
= 25
C
-
13.5
-
dB
V
O
output voltage
d
im
=
-
60 dB; I
C
= 120 mA; V
CE
= 18 V;
R
L
= 75
; f
p
+ f
q
-
f
r
= 793.25 MHz;
T
amb
= 25
C
-
1.2
-
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 07
3
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
25
V
V
CEO
collector-emitter voltage
open base
-
19
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
C
collector current (DC)
-
150
mA
P
tot
total power dissipation
T
c
145
C
-
2.7
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-c
thermal resistance from junction to case
20
K/W
1997 Nov 07
4
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
2. d
im
=
-
60 dB (DIN 45004B); I
C
= 120 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
O
at d
im
=
-
60 dB; f
p
= 445.25 MHz;
V
q
= V
O
-
6 dB; f
q
= 453.25 MHz;
V
r
= V
O
-
6 dB; f
r
= 455.25 MHz;
measured at f
p
+ f
q
-
f
r
= 443.25 MHz.
3. d
im
=
-
60 dB (DIN 45004B); I
C
= 120 mA; V
CE
= 18 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
O
at d
im
=
-
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
-
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
-
6 dB; f
r
= 805.25 MHz;
measured at f
p
+ f
q
-
f
r
= 793.25 MHz.
4. I
C
= 90 mA; V
CE
= 18 V; V
O
= 50 dBmV; T
amb
= 25
C;
f
p
= 50 MHz; f
q
= 400 MHz;
measured at f
p
+ f
q
= 450 MHz.
5. I
C
= 90 mA; V
CE
= 18 V; V
O
= 50 dBmV; T
amb
= 25
C;
f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 18 V
-
-
50
A
h
FE
DC current gain
I
C
= 120 mA; V
CE
= 18 V;
T
amb
= 25
C
55
-
-
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 18 V; f = 1 MHz
-
1.8
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
5.5
-
pF
C
re
feedback capacitance
I
C
= 0; V
CE
= 18 V; f = 1 MHz
-
1
1.2
pF
f
T
transition frequency
I
C
= 120 mA; V
CE
= 18 V;
f = 1 GHz; T
amb
= 25
C
-
6.5
-
GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
= 120 mA; V
CE
= 18 V;
f = 500 MHz; T
amb
= 25
C
-
17
-
dB
I
C
= 120 mA; V
CE
= 18 V;
f = 800 MHz; T
amb
= 25
C
-
13.5
-
dB
V
O
output voltage
note 2
-
1.35
-
V
note 3
-
1.2
-
V
d
2
second order intermodulation
distortion
note 4
-
-
70
-
dB
note 5
-
-
70
-
dB
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
-------------------------------------------------------------- dB
=
1997 Nov 07
5
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
Fig.2 Intermodulation distortion test circuit.
L1 = 8 nH.
L2 = 15 nH (2 turns copper wire, internal diameter 2 mm).
L3 = 10 nH (2 turns copper wire, internal diameter 1.5 mm).
L5: Lp = 21 mm; Rc = 75
.
L6: Lp = 16 mm; Rc = 75
.
handbook, full pagewidth
MEA260
DUT
,
VBB
10 k
10 nF
1 pF
L5
input
75
240
L2
33
33
L3
10 nF
1 pF
10 nF
L4
output
75
VCC
L1
10 nF
L6
4.7
F
10 nF
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 18 V; T
amb
= 25
C.
handbook, halfpage
0
160
120
80
40
40
80
160
MBB294
120
I (mA)
C
FE
h
Fig.4
Transition frequency as a function of
collector current; typical values.
V
CE
= 18 V; f = 1 GHz; T
amb
= 25
C.
handbook, halfpage
0
40
80
160
8
6
2
0
4
MBB296
120
I (mA)
C
(GHz)
T
f
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